2SD1007_15 KEXIN
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High collector to emitter voltage: VCEO 120V. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO 120 V Vegatlovrettime-rotcelloC CEO 120 V Vegatlovesab-rettimE EBO 5 V ItnerrucrotcelloC C 0.7 A I*)eslup(tnerrucrotcelloC C (pu) 1.2 A PnoitapissidrewoprotcelloC c 2 W TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 *. PW 10ms,duty cycle 50% Electrical Characteristics Ta = 25 *. PW 350us,duty cycle 2% NPN Transistors 2SD1007 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 Type 2SD1007-R 2SD1007-Q 2SD1007-P Range 90-180 135-270 200-400 Marking HR HQ HP Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic=1 mA， IB= 0 120 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage * VCE(sat) IC=500 mA, IB=50mA 0.6 Base - emitter saturation voltage * VBE(sat) IC=500 mA, IB=50mA 1.5 Base - emitter voltage * VBE VCE= 10V, IC= 10mA 0.55 0.68 VCE= 1V, IC= 5mA 45 200 VCE= 1V, IC= 100mA 90 200 400 Collector output capacitance Cob VCB= 10V, IE=0,f=1MHz 10 pF Transition frequency fT VCE= 10V, IC= 10mA 90 MHz DC current gain * hFE V uA V
www.kexin.com.cn2 Transistors NPN Transistors 2SD1007 ■ Typical Characterisitics
www.kexin.com.cn 3 Transistors NPN Transistors 2SD1007 ■ Typical Characterisitics