2SD1007 AITSEMI

Document overview

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Technical content

AiT Semiconductor Inc. www.ait-ic.com 2SD1007 GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS REV1.1 - MAR 2015 RELEASED, AUG 2020 UPDATED - - 1 - DESCRIPTION FEATURES The 2SD1007 is available in SOT-89 package  High collector emitter voltage: VCEO>120V  Available in SOT-89 package PIN DESCRIPTION 1. BASE 2. COLLECTOR 3. EMITTER

ORDERING INFORMATION

SPQ: 1,000/Reel 2SD1007-R 2SD1007-Q 2SD1007-P hFE 2SD1007-R = 90~180 2SD1007-Q = 135~270 2SD1007-P = 200~400 AiT provides all RoHS Compliant Products

AiT Semiconductor Inc. www.ait-ic.com 2SD1007 GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS REV1.1 - MAR 2015 RELEASED, AUG 2020 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS TA=25°C VCBO, Collector-Base Voltage 120V VCEO, Collector-Emitter Voltage 120V VEBO, Emitter-Base Voltage 5V IC, Collector Current 0.7A IC(pu), Collector Current (pulse)NOTE1 1.2A PC, Collector Power Dissipation 2W TJ, Junction Temperature 150°C TSTG, Storage Temperature -55°C ~150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: PW≤10ms, duty cycle≤50%

ELECTRICAL CHARACTERISTICS

TA=25°C Parameter Symbol Conditions Min. Typ. Max. Unit Base-Emitter VoltageNOTE2 VBE VCE=10V, IC=10mA 550 620 650 mV Collector Cutoff Current ICBO VCB=120V, IE=0 - - 100 nA Emitter Cutoff Current IEBO VEB=5V, IC=0 - - 100 nA DC Current GainNOTE2 hFE VCE=1V, IC=100mA 90 200 400 VCE=1V, IC=5.0mA 45 200 - Collector- Emitter Saturation VoltageNOTE2 VCE(sat) IC=500mA, IB=50mA - 0.3 0.6 V Base-Emitter Saturation VoltageNOTE2 VBE(sat) IC=500mA, IB=50mA - 0.9 1.5 V Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - 10 - pF Transition Frequency fT VCE=10V, IE=-10mA - 90 - MHz NOTE2: PW≤350μs, duty cycle≤2%

  • hFE Classification 2SD1007-R 2SD1007-Q 2SD1007-P hFE 90~180 135~270 200~400

AiT Semiconductor Inc. www.ait-ic.com 2SD1007 GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS REV1.1 - MAR 2015 RELEASED, AUG 2020 UPDATED - - 3 -

PACKAGE INFORMATION

Dimension in SOT-89 (Unit: mm) Symbol Min Max A 1.4 1.6 b 0.35 0.55 b1 0.4 0.65 b2 1.6 TYP c 0.35 0.45 D 4.4 4.6 E 2.35 2.55 e 1.5 TYP e1 3.0 TYP HE 4.15 TYP L 2.7 TYP LE 1.0 TYP α 5°

AiT Semiconductor Inc. www.ait-ic.com 2SD1007 GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS REV1.1 - MAR 2015 RELEASED, AUG 2020 UPDATED - - 4 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated cir cuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.