2SD1001-HF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors ■ Features
- High collector saturation voltage. VCE(sat) > 80V
- Complimentary to 2SB800-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 300 Collector Current - Pulse (Note.1) ICP 500 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA Note.1: Pw ≤ 100ms,duty cycle ≤ 50℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 80 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 80 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 80 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=300 mA, IB=30mA 0.15 0.6 Base - emitter saturation voltage (Note.1) VBE(sat) IC=300 mA, IB=30mA 0.86 1.2 Base - emitter voltage (Note.1) VBE VCE= 6V, IC= 10mA 600 645 700 mV VCE= 1V, IC= 50mA 90 200 400 VCE= 2V, IC= 300mA 30 80 Collector output capacitance Cob VCB= 6V, IE=0,f=1MHz 7 pF Transition frequency fT VCE= 6V, IE= -10mA 140 MHz DC current gain (Note.1) hFE V uA V Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SD1001- M-HF 2SD1001- L-HF 2SD1001- K-HF Range 90-180 135-270 200-400 Marking EM F EL F EK F
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SD1001-HF
www.kexin.com.cn2 Transistors ■ Typical Characterisitics NPN Transistors 2SD1001-HF
www.kexin.com.cn 3 Transistors ■ Typical Characterisitics NPN Transistors 2SD1001-HF