2SD0638 PANASONIC

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Technical content

1Publication date: November 2002 SJC00193BED 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) ■ Features

  • Low collector-emitter saturation voltage VCE(sat)
  • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 30 V Collector-emitter voltage (Base open) V CEO 25 V Emitter-base voltage (Collector open) V EBO 7V Collector current I C 0.5 A Peak collector current I CP 1A Collector power dissipation * PC 600 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 03 0 V Collector-emitter voltage (Base open) V CEO IC = 2 mA, IB = 02 5 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 07V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Base-emitter saturation voltage I CEO VCE = 20 V, IB = 01 µA Forward current transfer ratio h FE1 * VCE = 10 V, IC = 10 mA 85 340  hFE2 VCE = 10 V, IC = 500 mA 40 90 Collector-emitter saturation voltage V CE(sat) IC = 300 mA, IB = 30 mA 0.35 0.6 V Transition frequency f T VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF (Common base, input open circuited) ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 6.9±0.1 2.5±0.1 (1.0) (1.0) (1.5) (0.85) 0.45±0.05 0.55±0.1 (2.5)(2.5) 213 R 0.7 R 0.9 (0.4) 3.5±0.1 4.5±0.14.1±0.2 2.4±0.21.25±0.05 2.0±0.2 1.0±0.1 (1.5) 1: Base 2: Collector 3: Emitter Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Note) The part number in the parenthesis shows conventional part number.

2 SJC00193BED

VCE(sat)  IC VBE(sat)  IC hFE  IC PC  Ta IC  VCE IC  IB fT  IE Cob  VCB ICBO  Ta 0 160 40 120 80 14020 100 60 800 600 200 500 700 400 100 300 Collector power dissipation PC (mW) Ambient temperature Ta (°C) 02 0 1641 2 8 800 600 200 500 700 400 100 300 Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA Collector current IC (mA) Collector-emitter voltage VCE (V) 01 0 826 4 800 600 200 500 700 400 100 300 VCE = 10 V Ta = 25°C Base current IB (mA) Collector current IC (mA) 0.01 0.1 1 10 0.01 0.1

100 IC / IB = 10

25°C −25°C Ta = 75°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) 0.01 0.1 1 10 0.01 0.1 Ta = −25°C 25°C 75°C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) 0.01 0.1 1 10 300 250 200 150 100 VCE = 10 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (A) −1 −10 −100 240 200 160 120 VCB = 10 V Ta = 25°C Transition frequency fT (MHz) Emitter current IE (mA) 1 10 100 IE = 0 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) 02 0 0 16040 120 80 102 103 104 VCE = 10 V Ambient temperature Ta (°C) ICEO (Ta) ICEO (Ta = 25°C)

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications:

  • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
  • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL