2SC945-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

SMD Type DiodesSMD Type Transistors www.kexin.com.cn ■ Features

  • Collector current up to 150mA High hFE linearity ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (DC) IC 150 mA Power dissipation PC 200 mW Junction temperature Tj 150 ℃ Storage temperature range Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100 μA, IC=0 5 V Collector cutoff current ICBO VCB = 60V, IE = 0 0.1 μA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 0.1 μA VCE = 6.0V, IC =1.0mA 130 400 VCE = 6.0V, IC =0.1mA 40 Collector saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base saturation voltage VBE(sat) IC=100mA,IB=10mA 1.0 V Collector to base capacitance Cob VCB = 10 V, IE = 0 , f = 1 MHz 3.0 pF Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ 4 10 dB Transition frequency fT VCE=6V,IC=10mA,f =30 MHz 150 MHz DC current gain hFE ■ Classification of hfe(1) Complementary to 2SA733-HF Type 2SC945-L-HF 2SC945-H-HF Range 130-200 200-400 Marking CRL F CR F 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC945-HF

SMD Type DiodesSMD Type Transistors 2 www.kexin.com.cn 0 2 4 6 8 10 12 0010111.0 200 400 600 800 1000 001011 100 001011 100 1000 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0111.0 COMMON EMITTER Ta=25℃ 24uA 9uA 30uA 27uA 21uA 18uA 15uA 12uA 6uA IB=3uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic 30.3 150 VBEsat — — IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=100℃ Ta=25℃ 3030.330 0513 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=100℃ Ta=25℃ β=10 VCEsat — — IC 300 3030.7 300 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ VCE=6V IChFE — — 150 COLLECTOR POWER DISSIPATION PC (W) AMBIENT TEMPERATURE Ta ( )℃ PC — — Ta CAPACITANCE C (pF) REVERSE BIAS VOLTAGE V (V) Cob Cib f=1MHz IE=0 /IC=0 Ta=25℃ VCB / VEBCob / Cib — — ■ Typical Characterisitics NPN Transistors 2SC945-HF