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1Publication date: March 2003 SJC00098CED Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification ■ Features
- Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 30 V Collector-emitter voltage (Base open) V CEO 20 V Emitter-base voltage (Collector open) V EBO 5V Collector current I C 30 mA Collector power dissipation P C 400 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 03 0 V Collector-emitter voltage (Base open) V CEO IC = 2 mA, IB = 02 0 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 05V Forward current transfer ratio * hFE VCE = 10 V, IC = 1 mA 70 250 Transition frequency f T VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230 MHz Reverse transfer capacitance C re VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.3 1.6 pF (Common emitter) Reverse transfer impedance Z rb VCB = 10 V, IE = −1 mA, f = 2 MHz 60 Ω Unit: mm 1: Emitter 2: Collector 3: Base 5.0±0.2 0.7±0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 0.45+0.15 –0.1 2.5 12 3 +0.6 –0.2 4.0±0.2 5.1±0.212.9±0.5 2.3±0.2 0.7±0.2 Note) The part number in the parenthesis shows conventional part number. ■ Electrical Characteristics Ta = 25°C ± 3°C Rank B C hFE 70 to 160 110 to 250 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification
2 SJC00098CED
PC Ta IC VCE IC VBE IB VBE VCE(sat) IC hFE IC fT IE Zrb IE Cre VCE 0 160 40 120 80 500 400 300 200 100 Collector power dissipation PC (mW) Ambient temperature Ta (°C) 0 4 8 12 16 Ta = 25°C IB = 100 µA 80 µA 60 µA 40 µA 20 µA Collector current IC (mA) Collector-emitter voltage VCE (V) VCE = 10 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (mA) 0 1.2 0.4 0.8 1.6 120 100 VCE = 10 V Ta = 25°C Base-emitter voltage VBE (V) Base current IB (µA) 0.1 1 10 100 0.01 0.1
100 IC / IB = 10
Ta = 75°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 0.1 1 10 100 300 250 200 150 100 VCE = 10 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (mA) − 0.1 −1 −10 −100 600 500 400 300 200 100 Ta = 25°C VCB = 10 V 6 V Transition frequency fT (MHz) Emitter current IE (mA) − 0.1 −1 −10 f = 2 MHz Ta = 25°C VCB = 6 V 10 V Reverse transfer impedance Zrb (Ω) Emitter current IE (mA) 0.1 1 10 100 2.4 2.0 1.6 1.2 0.8 0.4 IC = 1 mA f = 10.7 MHz Ta = 25°C Collector-emitter voltage VCE (V) Reverse transfer capacitance Cre (pF) (Common emitter)
Cob VCB bie gie bre gre bfe gfe boe goe 1 10 100 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 IE = −1 mA f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) 02 0 1641 2 8 yie = gie + jbie VCE = 10 V f = 0.45 MHz −1 mA −2 mA −4 mA −7 mA 10.7 100 IE = − 0.4 mA Input conductance gie (mS) Input susceptance bie (mS) −3.0 − 0.5 −1.0 −1.5 −2.0 −2.5 yre = gre + jbre VCE = 10 V f = 0.45 MHz IE = −7 mA −2 mA −4 mA −1 mA − 0.4 mA 100 10.7 Reverse transfer conductance gre (mS) Reverse transfer susceptance bre (mS) 0 100 8020 60 40 −120 −20 −40 −60 −80 −100 yfe = gfe + jbfe VCE = 10 V IE = −7 mA −4 mA−2 mA − 0.1 mA − 0.4 mA −1 mA 0.45 0.45 10.7 10.7 f = 10.7 MHz 100 100 100 100 Forward transfer conductance gfe (mS) Forward transfer susceptance bfe (mS) 1.2 1.0 0.8 0.6 0.4 0.2 yoe = goe + jboe VCE = 10 Vf = 0.45 MHz IE = − 0.1 mA −7 mA −4 mA −2 mA −1 mA − 0.4 mA 10.7 100 Output conductance goe (mS) Output susceptance boe (mS)
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