2SC6145 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC6145
DESCRIPTION
- Highfrequencymulti emittertransistor
- Smallpackage(TO-3P)
- Highpower handling capacity ,160W
- ComplementtoType 2SA2223
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation.
APPLICATIONS
- Signaltransistors foraudioamplifiers
- Audiomarket ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 230 V VCEO Collector-EmitterVoltage 230 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 15 A IB BaseCurrent-Continuous 4.0 A PC CollectorPowerDissipation @TC=25℃ 160 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC6145 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=25mA;IB=0 230 V VCE(sat) Collector-EmitterSaturationVoltage IC=5A;IB=0.5A 0.5 V ICBO CollectorCutoffCurrent VCB=230V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 μA hFE DCCurrentGain IC=5A;VCE=4V 40 140 COB OutputCapacitance IE=0;VCB=10V;f=1.0MHz 250 pF fT Current-Gain—BandwidthProduct IC=2A;VCE=12V 60 MHz hFE Classifications R O Y 40-80 50-100 70-140