2SC6117 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High speed.
  • High breakdown voltage (VCBO =1500V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 1500 V Collector-to-Emitter Voltage V CEO 800 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 8A Collector Current (Pulse) I CP 20 A Collector Dissipation P C 3.0 W Tc=25°C6 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =800V, IE=0A 10 µA Collector Cutoff Current I CES VCE =1500V, RBE =0Ω 1.0 mA Collector Sustain Voltage V CEO (sus) IC =100mA, IB=0A 800 V Emitter Cutoff Current I EBO VEB =4V, IC =0A 40 130 mA Continued on next page. 91207KC TI IM TC-00000889 SANYO Semiconductors DATA SHEET 2SC6117 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use.

No. A0901-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =4.5A, IB=0.9A 2 V Base-to-Emitter Saturation Voltage V BE (sat) I C =4.5A, IB=0.9A 1.5 V DC Current Gain hFE 1V CE =5V, IC =1A 10 hFE 2V CE =5V, IC =5A 5.3 7.5 Diode Forward Voltage V F IEC =7A 2 V Fall Time t f IC =3A, IB1=0.6A, IB2=- -1.2A 0.2 µs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7504-001 VR R B VCC =200VVBE = --5V 50Ω INPUT OUTPUT R L=66.7Ω 100µF 470µF PW=20 µs IB1 D.C.≤1% IB2 16.0 3.4 123 21.0 5.0 22.0 0.8 20.4 4.0 2.0 2.8 2.1 5.45 5.45 0.7 0.9 3.5 8.0 5.6 3.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH 01 3579 2468 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V IC -- VBE Collector Current, IC -- A 0.2A 0.05A 0.4A 0.6A 0.8A 1.0A 2.0A 1.2A1.4A1.6A IC -- VCE IT01800 IT01801 V CE =5V -40 Ta=120 IB =0A 1.8A

No. A0901-3/4 IT12806 IT12808 IT12807 IT12809Case Temperature, Tc -- °C Collector Dissipation, PC -- W PC -- Tc Reverse Bias A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W PC -- Ta 20 40 60 80 100 120 140 160 3.5 2.5 3.0 2.0 1.0 1.5 0.5 1.0 0.1 10 23 2 5 57 100 32 3 57 1000 L=500 µH IB2 = --1A Tc=25°C Single pulse 20 40 60 80 100 120 140 160 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Forward Bias A S O 0.001 0.01 0.1 1.0 10 100 100035 723 5 7 23 5 7 2 1.0 IC =8A ICP =20A 100 µs300 µs1ms 10ms DC operation Tc=25°C Single pulse 0.1 0.1 1.0 23 5 7 23 5 7 1.0 10 VCE (sat) -- IC 1.0 0.1 1.0 1023 5 7 2 3 5 7 Collector Current, IC -- A hFE -- IC DC Current Gain, hFE -40°C 25°CTa=120 IT01802 IT01803 V CE =5V IC / IB =5 25°C Ta=--40°C Ta= --40 120°C Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V 120 IT11890 0.1 1.0 0.1 5 1.023 7 5 1023 7 V CC =200V IC / IB1 =5 IB2 / IB1 =2 R load tstg tf IT11891 V CC =200V IC =3A IB1 =0.6A R loadtstg tf 0.1 1.0 0.1 5 1.023 7 5 1023 7 Collector Current, IC -- A Switching Time, SW Time -- µs SW Time -- IC SW Time -- IB2 Base Current, IB2 -- A Switching Time, SW Time -- µs

No. A0901-4/4PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of September, 2007. Specifications and information herein are subject to change without notice.