2SA2197 SANYO

Document overview

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Technical content

Features

  • Adoption of MBIT process.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications ( ) : 2SA2197 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -30)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)7 A Collector Current (Pulse) I CP (- -)9 A Base Current I B (- -)1.2 A Collector Dissipation P C Tc=25°C1 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)30V, IE=0A (- -)0.1 µA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0A (- -)0.1 µA DC Current Gain h FE VCE =(- -)2V, IC =(- -)500mA 200 560 Gain-Bandwidth Product f T VCE =(- -)10V, IC =(- -)500mA (250)290 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (52)40 pF Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92706EA MS IM TC-00000207 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET 2SA2197 / 2SC6102 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

No. A0463-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)2.5A, IB=(- -)50mA (- -160)125 (- -240)185mV Base-to-Emitterr Saturation Voltage V BE (sat) V CE =(- -)2.5V, IB=(- -)50mA (- -)0.84 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0A (- -30)40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0A (- -)6 V Turn-On Time t on See specified Test Circuit. (30)30 ns Storage Time t stg See specified Test Circuit. (190)320 ns Fall Time t f See specified Test Circuit. (17)14 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7515-002 8.0 4.0 1.6 0.8 0.6 0.8 7.03.0 1.5 11.015.5 0.5 2.7 123 3.0 4.8 1.2 2.4 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IB =0mA 5mA 10mA 15mA 20mA IT11479 --7 --6 --3 --4 --5 --1 --2 --10mA --15mA IB =0mA IT11478 --20mA --40mA 2SA2197 2SC6102 --5mA --30mA --50mA 30mA40mA50mA --25mA 25mA VR R B VCC =12VVBE = --5V + + 50Ω INPUT OUTPUT 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 20IB1 = --20IB2 =IC =2.5A For PNP, the polarity is reversed. R L

No. A0463-3/5 hFE -- IC hFE -- IC fT -- IC fT -- IC Cob -- VCBCob -- VCB Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Ta=75°C 25°C --25°C 1000 100 Ta=75°C 25°C --25°C 1000 100 0.01 325 100.173 25 7 3 25 71.0 2SA2197 V CE = --2V IT11299 IT11306 2SC6102 V CE =2V 100 100 0.01 25 73 0.1 25 5 732 3 1.0 IT11301 2SA2197 V CE = --10V IT11308 2SC6102 V CE =10V IT11307 100 37--0.1 25 2 --1.0 37 52 3 7 5--10 100 370.1 25 2 1.0 37 52 3 7 510 IT11300 2SA2197 f=1MHz 2SC6102 f=1MHz IC -- VBEIC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IT11305 2SA2197 V CE = --2V --7 --4 --3 --6 --5 --2 --1 IT11298 Ta=75 --25 Ta=75 --25 2SC6102 V CE =2V

No. A0463-4/5 1.0 0.01 0.1 1.00.1 225 37 10 2535 37 ICP =9A 100ms 10ms 1ms 100 µs500 µs IC =7A IT11480 DC operation ( Tc=25 °C) DC operation ( Ta=25 °C) 1.2 0.8 1.0 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 IT11476 2SA2197 / 2SC6102 VBE (sat) -- IC VBE (sat) -- IC VCE (sat) -- IC VCE (sat) -- IC Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V VBE (sat) -- IC 3 1.0 0.1 Ta= --25°C 2 1.0 1035 7 2 35 7 75°C 25°C --1.0 --0.1 Ta= --25°C 2 --1.0 --1035 7 2 35 7 2SA2197 IC / IB =50 IT11304 75°C IT11311 --0.1 --1.0 --0.01 IT11303 Ta=75 25°C --25°C 0.1 23 5 7 23 5 7 1.0 10 0.1 1.0 0.01 Ta=75 25°C --25°C 2SA2197 IC / IB =50 IT11310 2SC6102 IC / IB =50 2SC6102 IC / IB =50 25°C VCE (sat) -- ICVCE (sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V 2SC6102 IC / IB =20 --0.1 --0.01 Ta=75 --25°C IT11302 2SA2197 IC / IB =20 25°C 0.1 0.01 0.1 23 5 7 23 5 7 1.0 10 Ta=75 --25°C 25°C IT11309 A S O PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °CCollector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 2SA2197 / 2SC6102 Tc=25°C Single pulse For PNP, the minus sign is omitted. No heat sink

No. A0463-5/5PS Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. Case Temperature, Tc -- °C Collector Dissipation, PC -- W PC -- Tc 2006 0 40 80 100 140 120 160 IT11481 2SA2197 / 2SC6102