2SC6097 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of FBET, MBIT process.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 100 V Collector-to-Emitter Voltage V CES 100 V Collector-to-Emitter Voltage V CEO 60 V Emitter-to-Base Voltage V EBO 6.5 V Collector Current I C 3A Collector Current (Pulse) I CP 5A Base Current I B 600 mA Collector Dissipation P C 0.8 W Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =50V, IE=0A 1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0A 1 µA DC Current Gain h FE VCE =2V, IC =100mA 300 600 Continued on next page. 70306 / 53006EA MS IM TB-00002348 2SC6097 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

No. A0412-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE =10V, IC =500mA 390 MHz Output Capacitance Cob V CB =10V, f=1MHz 18 pF Collector-to-Emitter Saturation Voltage VCE (sat)1 IC =1A, IB=50mA 100 150 mV VCE (sat)2 IC =1A, IB=100mA 90 135 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =1A, IB=100mA 0.84 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0A 100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC =100µA, RBE =0Ω 100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 60 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0A 6.5 V Turn-ON Time t on See specified Test Circuit. 35 ns Storage Time t stg See specified Test Circuit. 680 ns Fall Time t f See specified Test Circuit. 24 ns Package Dimensions Package Dimensions unit : mm unit : mm 7518-003 7003-003 Switching Time Test Circuit VR 10 R B VCC =30V 10IB1 = --10IB2 =IC =0.5A VBE = --5V 50Ω INPUT OUTPUT R L 470µF100µF PW=20 µs IB1 D.C.≤1% IB2 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA

No. A0412-3/4 IC -- VCE Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Cob -- VCB VCE (sat) -- IC VBE (sat) -- IC Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V hFE -- IC fT -- IC Collector Current, IC -- A DC Current Gain, hFE Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A IT11052 IT11050 Ta=75 --25 IT11051 IC / IB =10 25°C 1.0 Ta= --25°C 25°C 75°C IC / IB =10 IT11053 1000 100 100 0.01 0.1 0.01 325 3 250.172 3 5 1.07 IT11048 IT11049 V CE =10V f=1MHz Ta=75 --25 IC / IB =20 25°C 0.01 325 0.172 3 5 2 3 5 1.07 0.1 0.01 Ta=75°C 25°C --25°C V CE =2V 5.0 3.5 4.5 1.5 2.5 0.5 4.0 2.0 3.0 1.0 3.0 1.0 2.0 1.5 2.5 0.5 IT11046 10mA IB =0mA 2mA Ta=75 --25 V CE =2V IT11047 5mA 20mA 40mA 60mA 80mA 100mA

No. A0412-4/4PS 17.5 15.0 10.0 7.5 5.0 2.5 12.5 2006 0 40 80 100 140 120 160 IT11057 0.9 0.5 0.3 0.1 0.7 0.6 0.8 0.4 0.2 2006 0 40 80 100 140 120 160 IT11056 0.01 0.1 1.0 1.00.1 22 53 7 10 253 7 10053 7 ICP =5A 100ms 1ms IC =3A IT11054 500 µs <10µs DC operation 100 µs10ms 0.01 0.1 1.0 1.00.1 22 53 7 10 253 7 10053 7 ICP =5A IC =3A IT11055 500 µs <10µs DC operation 1ms10ms 100ms 100 µs A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Dissipation, PC -- W PC -- Ta Collector Dissipation, PC -- W PC -- Tc Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C Ta=25°C Single Pulse A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Tc=25°C Single Pulse Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice.