2SC6096 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of FBET, MBIT process.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 120 V Collector-to-Emitter Voltage V CES 120 V Collector-to-Emitter Voltage V CEO 100 V Emitter-to-Base Voltage V EBO 6.5 V Collector Current I C 2A Collector Current (Pulse) I CP 3A Base Current I B 400 mA Collector Dissipation P C Mounted on a ceramic board (250mm25 0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =80V, IE=0A 1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0A 1 µA DC Current Gain h FE VCE =5V, IC =100mA 300 600 Marking : QG Continued on next page. 82306 / 62006EA MS IM TB-00002425 2SC6096 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications SANYO Semiconductors DATA SHEET Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

No. A0434-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE =10V, IC =300mA 300 MHz Output Capacitance Cob V CB =10V, f=1MHz 13 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =1A, IB=100mA 100 150 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =1A, IB=100mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0A 120 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC =100µA, RBE =0Ω 120 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 100 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0A 6.5 V Turn-ON Time t on See specified Test Circuit. 40 ns Storage Time t stg See specified Test Circuit. 1100 ns Fall Time t f See specified Test Circuit. 40 ns Package Dimensions Switching Time Test Circuit unit : mm 7007A-004 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View VR 10 R B VCC =50V 10IB1 = --10IB2 =IC =0.5A VBE = --5V + + 50Ω INPUT OUTPUT R L 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 2.0 1.6 1.2 0.8 0.4 0.2 1.8 1.4 1.0 0.6 2.0 1.6 1.2 0.4 0.2 0.8 1.8 1.4 0.6 1.0 IT11115 10mA 20mA 40mA 80mA 100mA IB =0mA 5mA 2mA Ta=75 --25 V CE =5V IT11116 60mA IC -- VCE Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V

No. A0434-3/4 4.0 3.0 3.5 2.5 2.0 1.5 1.0 0.5 2006 0 40 80 100 140 120 160 IT11124 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 IT11123 Mounted on a ceramic board (250mm 250.8mm) Collector Dissipation, PC -- W PC -- Ta Collector Dissipation, PC -- W PC -- Tc Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C 100 IT11119 Ta=75 --25 IT11120 IC / IB =10 25°C 1.0 Ta= --25°C 25°C 75°C IC / IB =10 IT11121 Ta=75°C 25°C --25°C 100 1000 100 0.1 0.01 0.01 325 0.172 3 22 3 25 1.07 V CE =5V IT11117 IT11118 V CE =10V f=1MHz 0.01 0.1 1.0 1.00.1 225 37 10 2537 IT11122 100ms 10ms <10µs 1ms 500 µs 100 µs ICP =3A IC =2A 100 2537 DC operation(Tc=25 °C) Cob -- VCB VCE (sat) -- IC VBE (sat) -- IC Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V hFE -- IC fT -- IC Collector Current, IC -- A DC Current Gain, hFE Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A DC operation (Ta=25 °C) Mounted on a ceramic board (250mm 250.8mm) A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Tc=25°C Single Pulse

No. A0434-4/4PS This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.