2SC6093LS SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High speed.
  • High breakdown voltage (VCBO =1500V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 1500 V Collector-to-Emitter Voltage V CEO 800 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 5A Collector Current (Pulse) I CP 12 A Collector Dissipation P C 2.0 W Tc=25°C2 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =800V, IE=0A 10 µA Collector Cutoff Current I CES VCE =1500V, RBE =0Ω 1.0 mA Collector Sustain Voltage V CEO (sus) IC =100mA, IB=0A 800 V Emitter Cutoff Current I EBO VEB =4V, IC =0A 40 130 mA Collector-to-Emitter Saturation Voltage VCE (sat)1 IC =1.35A, IB=0.27A 0.1 0.3 V VCE (sat)2 IC =2.7A, IB=0.54A 2 V Base-to-Emitter Saturation Voltage V BE (sat) I C =2.7A, IB=0.54A 1.5 V DC Current Gain hFE 1V CE =5V, IC =0.5A 10 hFE 2V CE =5V, IC =3A 5.3 7.5 Diode Forward Voltage V F IEC =4A 2 V Fall Time t f IC =1.8A, IB1=0.36A, IB2=- -0.72A 0.2 µs 11707KC TI IM TC-00000456 SANYO Semiconductors DATA SHEET 2SC6093LS NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

No. A0274-2/4 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7509-003 VR R B VCC =200VVBE = --5V ++50Ω INPUT OUTPUT R L=111Ω 100µF 470µF PW=20 µs IB1 D.C.≤1% IB2 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Base-to-Emitter V oltage, VBE -- V IC -- VBE Collector Current, IC -- A Collector Current, IC -- A VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V IC -- VCE 01 3 5 7 9 24 68 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1.0 0.1 23 5 7 23 5 7 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1.0 1023 5 7 23 5 7 1.0 IT11312 IT11314 IT11315 IT11313 IC / IB =5 25°C 120 120°C Ta= --40 Ta= --40 V CE =5V Ta=120 IB =0A 0.05A 0.1A 0.2A 0.3A 0.4A 0.5A 0.6A 0.7A0.8A0.9A1.0A 1.1A 1.2A 1.3A 1.4A 1.5A V CE =5V 25°C --40°C Ta= 120 --40

No. A0274-3/4 20 40 60 80 100 120 140 160 2.5 2.0 1.5 1.0 0.5 20 40 60 80 100 120 140 160 IT11316 IT11318 IT11320 IT11319 IT11321 0.1 1.0 0.1 5 1.023 7 5 23 7 0.01 0.1 1.0 1.0 1.0 0.1 10 23 2 5 57 100 32 3 57 100010 100 100035 723 5 7 23 5 7 2 tstg tf IT11317 0.1 1.0 0.1 5 1.023 7 23 tstg tf 300 µs1ms 10ms DC operation ICP =12A IC =5A 100 µs Collector Current, IC -- A Switching Time, SW Time -- µs SW Time -- IC Reverse Bias A S O SW Time -- IB2 Base Current, IB2 -- A Switching Time, SW Time -- µs Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Forward Bias A S O Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Case Temperature, Tc -- °C Collector Dissipation, PC -- W PC -- Tc No heat sink Tc=25°C Single pulse L=500 µH IB2 = --1.0A Tc=25°C Single pulse V CC =200V IC / IB2 =5 IB2 / IB1 =2 R load V CC =200V IC =1.8A IB1 =0.36A R load Collector-to-Emitter V oltage, VCE -- V PC -- Ta

No. A0274-4/4PS Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice.