2SC6082 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC6082
DESCRIPTION
- Large currentcapacitance
- High speedswitching
- Lowsaturation voltage
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- High speedswitchingapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 50 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 15 A IB BaseCurrent-Continuous 3 A ICP CollectorCurrent-Pulse 20 A PC CollectorPowerDissipation @Ta=25℃ 2 W CollectorPowerDissipation @TC=25℃ 23 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC6082 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=7.5A;IB=0.375A 0.4 V VBE(sat) Base-EmitterSaturationVoltage IC=7.5A;IB=0.375A 1.2 V ICBO CollectorCutoffCurrent VCB=40V;IE=0 10 μA hFE-1 DCCurrentGain IC=330mA;VCE=2V 200 560 hFE-2 DCCurrentGain IC=10A;VCE=2V 50 tstg StorageTime IC=5A,IB1=0.25A;IB2=-0.25A 560 ns tf FallTime 37 ns