2SC6081 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of MBIT process.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 60 V Collector-to-Emitter Voltage V CES 60 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 5A Collector Current (Pulse) I CP PW ≤10µs, duty cycle≤10% 8 A Base Current I B 1A Collector Dissipation P C Tc=25°C2 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =40V, IE=0A 10 µA Emitter Cutoff Current I EBO VEB =4V, IC =0A 10 µA DC Current Gain hFE 1V CE =2V, IC =125mA 200 560 hFE 2V CE =2V, IC =3.75A 50 Continued on next page. 72606 / 31506FA MS IM TB-00002090 2SC6081 NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching

Applications

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

No. A0278-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE =10V, IC =0.7A 250 MHz Output Capacitance Cob V CB =10V, f=1MHz 35 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =2.5A, IB=125mA 200 400 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =2.5A, IB=125mA 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =100µA, IE=0A 60 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC =100µA, RBE =0Ω 60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=100µA, IC =0A 6 V Turn-ON Time t on See specified Test Circuit. 49 ns Storage Time t stg See specified Test Circuit. 600 ns Fall Time t f See specified Test Circuit. 42 ns Package Dimensions Switching Time Test Circuit unit : mm 7508-002 VR R B VCC =25V IC =20IB1 = --20IB2 =1.5A VBE = --5V + +50Ω R L INPUT OUTPUT 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB210.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.22.4 1.6 1.2 0.70.75 2.55 2.55 123 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE IT10562 2.0 1.6 1.2 0.4 0.8 1.8 1.4 0.6 1.0 0.2 IT10563 2mA 3mA IB =0mA 1mA 5mA 18mA 20mA 10mA 4mA 16mA 9mA 8mA 14mA 12mA 5.0 4.0 3.0 1.0 2.0 4.5 3.5 1.5 2.5 0.5 5mA 10mA IB =0mA 2mA 15mA 80mA 90mA 100mA 20mA25mA30mA 70mA 60mA 45mA 40mA 50mA 35mA

No. A0278-3/4 Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Base-to-Emitter V oltage, VBE -- V IC -- VBE Collector Current, IC -- A VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Cob -- VCB VCE (sat) -- IC VBE (sat) -- IC Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Ta=75 --25 V CE =2V IT10564 IT10565 IT10566 IT10569IT10568 IT10570 1.0 Ta= --25°C 25°C 75°C IT10571 0.01 325 0.172 3 5 1.072 0.01 325 0.172 3 5 1.072 3 5 7 0.1 0.01 IT10567 IC / IB =20 Ta=75 --25 25°C IC / IB =20IC / IB =50 Ta=75 --25 25°C 35 7 0.01 325 0.172 3 5 1.072 0.1 0.01 35 7 Ta=75°C 25°C --25°C 100 1000 0.01 325 0.172 3 5 1.072 3 5 7 V CE =2V VCE =2.0V 1.0V 100 1000 0.01 325 0.172 3 5 1.072 3 5 7 Ta=25°C 0.7V 0.5V 0.2V 100 1000 0.01 325 0.173 25 7 2 3 1.0 57 10 100 1000 0.1 325 1.072 3 5 1072 3 5 7 V CE =10V f=1MHz

No. A0278-4/4PS IT10573 0.5 1.0 2.0 1.5 2.5 0.01 0.1 1.0 1.00.1 225 37 10025 3710537 ICP =8A IC =5A IT10572 2006 0 40 80 100 120 140 160 IT10560 DC operation PT=500 µs 100ms 1ms 10ms 2006 0 40 80 100 120 140 160 No heat sink Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Forward Bias A S O Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W PC -- Ta Case Temperature, Tc -- °C Collector Dissipation, PC -- W PC -- Tc Tc=25°C Single pulse This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.