2SC6071 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of MBIT process.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching. Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 120 V Collector-to-Emitter Voltage V CES 120 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 8V Collector Current I C 10 A Collector Current (Pulse) I CP PW ≤100µs1 3 A Base Current I B 2A Collector Dissipation P C 0.95 W Tc=25°C2 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =40V, IE=0A 10 µA Emitter Cutoff Current I EBO VEB =4V, IC =0A 10 µA DC Current Gain h FE VCE =2V, IC =1A 200 700 Gain-Bandwidth Product f T VCE =5V, IC =1A 200 MHz Output Capacitance Cob V CB =10V, f=1MHz 60 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =5A, IB=250mA 180 360 mV Base-to-Emitterr Saturation Voltage V BE (sat) I C =5A, IB=250mA 0.93 1.4 V Continued on next page. 80906 / 22406EA MS IM TB-00002046 2SC6071 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications SANYO Semiconductors DATA SHEET Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

No. A0271-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Base Breakdown Voltage V (BR)CBO IC =100µA, IE=0A 120 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC =100µA, RBE =0Ω 120 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=100µA, IC =0A 8 V Turn-On Time t on See specified Test Circuit. 40 ns Storage Time t stg See specified Test Circuit. 1000 ns Fall Time t f See specified Test Circuit. 80 ns Package Dimensions Package Dimensions unit : mm unit : mm 7518-003 7003-003 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP VR R B VCC =20VVBE = --5V + +50Ω INPUT OUTPUT R L 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC =20IB1 = --20IB2 =3A 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA

No. A0271-3/4 hFE -- ICIC -- VBE fT -- IC Cob -- VCB Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF VBE (sat) -- IC VCE (sat) -- ICVCE (sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- ACollector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V 1000 100 0.01 325 100.173 25 7 3 25 71.0 IT10656 IT10655 --25 Ta=75 V CE =2V Ta=75°C 25°C --25°C V CE =2V IT10657 V CE =5V 100 IT10658 f=1MHz 370.1 25 2 1.0 37 52 3 7 510 100 0.01 25 73 0.1 25 732 5 7 31.0 10 IC / IB =50 IT10661 1.0 0.01 0.1 10 Ta= --25°C 25°C 23 5 7 2 1.035 7 2 35 7 75°C 0.01 0.123 5 7 23 5 7 23 5 7 1.0 10 0.1 0.01 Ta=75 25°C --25 IT10660IT10659 IC / IB =20 1.0 0.1 0.01 0.01 0.123 5 7 23 5 7 23 5 7 1.0 10 Ta=75 --25°C 25°C IC / IB =50 0.01 0.1 1.0 1.00.1 10 100 25 3725 3725 37 ICP =13A (PW ≤100µs) 10µs100ms 10ms 1ms IC =10A IT10662 DC operation 500 µs 100 µs Tc=25°C Single pulse

No. A0271-4/4PS IT10664 0.2 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 0.95 0 20 40 60 80 100 120 140 160 IT10663 PC -- Tc 0 20 40 60 80 100 120 140 160 Collector Dissipation, PC -- W Case Temperature, Tc -- °C PC -- Ta No heat sink Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice.