2SC6065 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High breakdown voltage.
  • High-speed switching.
  • Wide ASO.
  • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 500 V Collector-to-Emitter Voltage V CEO 400 V Emitter-to-Base Voltage V EBO 8V Collector Current I C 1.5 A Collector Current (Pulse) I CP PW ≤300µs, duty cycle≤10% 3 A Base Current I B 0.7 A Collector Dissipation P C 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =400V, IE=0A 10 µA Emitter Cutoff Current I EBO VEB =5V, IC =0A 10 µA hFE 1V CE =5V, IC =0.1A 20 50 DC Current Gain h FE 2V CE =5V, IC =0.7A 10 hFE 3V CE =5V, IC =1mA 10 Continued on next page. 12006CB MS IM TB-00001637 2SC6065 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

No.8561-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE =10V, IC =0.1A 20 MHz Output Capacitance Cob V CB =10V, f=1MHz 10 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =0.7A, IB=0.14A 0.8 V Base-to-Emitter Saturation Voltage V BE (sat) I C =0.7A, IB=0.14A 1.5 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =1mA, IE=0A 500 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =5mA, RBE =∞ 400 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA, IC =0A 8 V Turn-ON Time t on IC =1A, IB1=0.2A, IB2=- -0.4A, RL=200Ω , VCC =200V 0.5 µs Storage Time t stg IC =1A, IB1=0.2A, IB2=- -0.4A, RL=200Ω , VCC =200V 2.5 µs Fall Time t f IC =1A, IB1=0.2A, IB2=- -0.4A, RL=200Ω , VCC =200V 0.25 µs Package Dimensions Switching Time Test Circuit unit : mm 7519-003 123 6.9 0.5 0.6 4.0 4.5 1.01.0 2.5 1.45 1.01.0 0.9 0.45 2.542.54 1 : Emitter 2 : Collector 3 : Base SANYO : NMP VR R B R L VBE = --5V V CC =200V INPUT OUTPUT 100mF 470 mF PW=20 ms IB1 IB2 D.C.£1% 50W 1.2 2.0 1.6 0.8 0.4 02 6 4813 7 59 10 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT06213 IB =0mA 10mA 20mA 50mA 100mA 150mA 200mA 250mA 300mA 350mA 500mA 1.0 1.8 1.4 0.6 0.2 IT06214 1.5 2.0 1.0 0.5 IC -- VBE Base-to-Emitter V oltag, VBE -- V Collector Current, IC -- A V CE =5V Ta=120 --40 400mA450mA

No.8561-3/4 0.1 7532 1.0 27 53 10 2 0.001 0.01 0.1 10ms1ms DC operation 500 µs 100 µs ICP =3A IC =1.5A 100ms 1.0 753 100 27 532 0.1 0.01 1.0 10010 23 5 723 5 7 1000 0.1 1.0 0.1 1.0 Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C PC -- Ta Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Reverse Bias A S O IT06220 Ta=25°C IB2 = --0.3A L=500 µH, single pulse Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Forward Bias A S O Ta=25°C Single pulse 1.00.1 2323 5 7 Collector Current, IC -- A IT06218 SW Time -- IC tstg tf IC / IB1 =5 IB2 / IB1 =2 R load IT06217 0.01 7532 0.1 7532 1.0 32 VBE (sat) -- IC Collector Current, IC -- A IC / IB =5 Ta= --40°C 120°C 25°C Switching Time, SW Time -- µs Base-to-Emitter Saturation V oltage, VBE (sat) -- V hFE -- IC Collector Current, IC -- A IT06215 23 5 70.001 0.01 23 5 7 0.1 23 5 7 1.0 23 V CE =5V 1.0 100 23 5 70.01 0.1 23 5 7 1.0 23 5 7 10 0.1 0.01 1.0 Ta=120°C 25°C --40°C VCE (sat) -- IC Collector Current, IC -- A IT06216 IC / IB =5 Ta=120 °C --40 DC Current Gain, hFE Collector-to-Emitter Saturation V oltage, VCE (sat) -- V 120°C 25°C Ta= --40°C 0 40 80 120 16020 60 100 140 0.8 0.4 1.0 0.6 0.2 0.7 0.3 0.9 0.5 0.1 IT10278

No.8561-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice.