2SC6064 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of MBIT process.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 80 V Collector-to-Emitter Voltage V CES 80 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 2A Collector Current (Pulse) I CP 4A Collector Dissipation P C 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =40V, IE=0A 1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0A 1 µA DC Current Gain hFE 1V CE =2V, IC =100mA 200 560 hFE 2V CE =2V, IC =1.5A 40 Gain-Bandwidth Product f T VCE =10V, IC =300mA 420 MHz Output Capacitance Cob V CB =10V, f=1MHz 9 pF Continued on next page. D2805EA MS IM TB-00001910 2SC6064 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

No. A0270-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =1A, IB=50mA 170 340 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =1A, IB=50mA 0.9 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0A 80 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0A 6 V Turn-ON Time t on See specified Test Circuit. 30 ns Storage Time t stg See specified Test Circuit. 330 ns Fall Time t f See specified Test Circuit. 40 ns Package Dimensions Switching Time Test Circuit unit : mm 7519-003 VR R B R L VBE = --5V V CC =25V INPUT OUTPUT 100µF 470 µF PW=20 µs IB1 IB2 D.C.≤1% 50Ω IC =10IB1 = --10IB2 =700mA123 6.9 0.5 0.6 4.0 4.5 1.01.0 2.5 1.45 1.01.0 0.9 0.45 2.542.54 1 : Emitter 2 : Collector 3 : Base SANYO : NMP IC -- VCE Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V 1.2 2.0 1.6 0.8 0.4 IT10515 IB =0mA 1mA 2mA 3mA 5mA 10mA 1.0 1.8 1.4 0.6 0.2 IT10516 1.4 2.0 0.8 0.2 1.6 1.0 0.4 1.8 1.2 0.6 V CE =2V Ta=75 --25 15mA 20mA 25mA30mA

No. A0270-3/4 IT10521 1.0 Ta= --25°C 25°C 75°C IC / IB =10 IT10522 0.01 325 0.172 3 2 3 5 1.07 IC / IB =20 Ta=75 --25 25°C 0.01 0.1 1.0 1.00.1 22 53 7 10 253 7 53 7 ICP =4A 100ms 1ms IC =2A IT10524 500 µs <10µs DC operation 10ms IT10519 0.1 325 1.072 3 5 1072 3 5 7 f=1MHz Ta=75 --25 IT10520 IC / IB =10 25°C 0.01 325 0.172 3 2 3 5 1.07 0.01 0.1 0.01 325 0.172 3 2 3 5 1.07 0.01 0.1 1.0 Ta= --25°C 25°C 75°C IC / IB =20 IT10523 0.01 325 0.172 3 2 3 5 1.07 100 µs VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Cob -- VCB VCE (sat) -- IC VBE (sat) -- IC Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V VBE (sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V hFE -- IC fT -- IC Collector Current, IC -- A DC Current Gain, hFE Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Ta=25°C Single pulse IT10517 23 5 70.01 0.1 23 23 57 1.0 V CE =2V 100 Ta=75°C 25°C --25°C 0.01 325 0.172 3 2 3 5 1.07 100 IT10518 V CE =10V

No. A0270-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. PC -- Ta Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W 1.0 0.8 0.6 0.4 0.2 0.1 0.9 0.7 0.5 0.3 2006 0 40 80 100 140 120 160 IT10525