2SC6024 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 15
Technical content
Features
- Low-noise use : NF=1.2dB typ (f=2GHz).
- High cut-off frequency : fT=14GHz typ (VCE =1V). :fT=21GHz typ (VCE =3V).
- Low operating voltage.
- High gain : S21e2=12.5dB typ (f=2GHz).
- Ultraminiature and thin flat leadless package (1.4mm5 0.8mm 5 0.6mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 9V Collector-to-Emitter Voltage V CEO 3.5 V Emitter-to-Base Voltage V EBO 2V Collector Current I C 35 mA Collector Dissipation P C 120 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =5V, IE=0A 1.0 µA Emitter Cutoff Current I EBO VEB =1V, IC =0A 1 µA DC Current Gain h FE VCE =3V, IC =15mA 80 160 Gain-Bandwidth Product fT1V CE =1V, IC =5mA 14 GHz fT2V CE =3V, IC =15mA 18 21 GHz Output Capacitance Cob V CB =1V, f=1MHz 0.5 0.7 pF Reverse Transfer Capacitance Cre V CB =1V, f=1MHz 0.3 pF Forward Transfer Gain S21e 21V CE =1V, IC =5mA, f=2GHz 9 10.5 dB S21e 22V CE =3V, IC =15mA, f=2GHz 12.5 dB Noise Figure NF V CE =1V, IC =5mA, f=2GHz 1.2 dB Marking : NM SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005AB MS IM TB-00000446 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 2SC6024 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications
No.8290-2/15 Package Dimensions unit : mm 7029-002 0.6 0.25 0.2 0.070.07 1.4 0.45 0.3 0.3 1.4 0.8 0.1 Top View Bottom View 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 100 1000 325 7 3 25 7 3 25 7 V CE =3V 0.1 1.0 10 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IT08200 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IT08189 hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE IT08392 Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF IT08202 VCE =3V 1V IB =0µA IB =250µA IB =225µA IB =200µA IB =175µA IB =150µA IB =125µA IB =100µA IB =75µA IB =50µA IB =25µA 0.1 23 5 7 1.0 23 5 7 10 0.1 f=1MHz
No.8290-3/15 --30 --40 --10 --20 Input Level, Pin -- dB Output Level, Pout -- dB IT08195 Pin -- Pout 1.0 10 23 5 7 7 23 5 Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz IT08205 fT -- IC Collector Current, IC -- mA Noise Figure, NF -- dB IT08197 NF -- IC 0 5 10 15 20 25 30 35 40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector Current, IC -- mA Noise Figure, NF -- dB IT08196 NF -- IC f=2.0GHz V CE =3V IC =15mA 1.0 23 5 7 23 5 7 10 ‰S21e‰2 -- IC Collector Current, IC -- mA Forward Transfer Gain, ‰S21e‰2 -- dB IT08203 1.0 23 5 7 23 5 7 10 ‰S21e‰2 -- IC Collector Current, IC -- mA Forward Transfer Gain, ‰S21e‰2 -- dB IT08204 f=2GHz 0 20 40 60 80 100 120 140 160 IT08206 Collector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C 100 120 140 Z S=50WZ S=Zsopt f=1GHz V CE =3V V CE =3V V CE=3V f=2.0GHz V CE =3V Z S=Zsopt Z S=50W 0 5 10 15 20 25 30 35 40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Z S=50W Z S=Zsopt f=2.0GHz V CE =1V
No.8290-4/15 SPICE PARAMETERS model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 124.2a A XTF 10.00m BF 168.7 VTF 8 V NF 1.007 ITF 549.7m A V AF 5.762 V PTF 25 °C IKF 141.1m A CJC 168.1f F ISE 181.0f A VJC 165.7m V NE 2.295 MJC 571.4m BR 11.54 XCJC 330.0m NR 1 TR 10.00p S V AR 3.43 V FC 800.0m IKR 21.00m A CJS 0 F ISC 1.800f A VJS 0 V NC 1.24 MJS 0 RB 2.86 Ω Lfc 188.0p H IRB 100.0 µ A Lwb 1.222n H RBM 1.254 Ω Lfb 180.0p H RE 1.297 Ω Lwe 423.0p H RC 2.552 Ω Lfe 256.0p H XTB 0 Ccb 18.00f F EG 1.11 eV Cbe 1.22f F XTI 3 Cec 13.00f F CJE 98.40f F Cbc 328.0f F VJE 10 V Ceb 358.0f F MJE 100.0m Cce 280.0f F TF 4.500p S SCHEMATIC *Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Lwe Lwb Cbe Ceb Cec Ccb Cbc Cce Lfe Lfb Lfc
8 IT09565
No.8290-5/15 S Parameters (Common emitter) V CE =1V , IC =5mA, Z O =50Ω
No.8290-6/15 S Parameters (Common emitter) V CE =1V , IC =10mA, Z O =50Ω
No.8290-7/15 S Parameters (Common emitter) V CE =1V , IC =15mA, Z O =50Ω
No.8290-8/15 S Parameters (Common emitter) V CE =1V , IC =20mA, Z O =50Ω
No.8290-9/15 S Parameters (Common emitter) V CE =1V , IC =25mA, Z O =50Ω
No.8290-10/15 S Parameters (Common emitter) V CE =3V , IC =5mA, Z O =50Ω
No.8290-11/15 S Parameters (Common emitter) V CE =3V , IC =10mA, Z O =50Ω
No.8290-12/15 S Parameters (Common emitter) V CE =3V , IC =15mA, Z O =50Ω
No.8290-13/15 S Parameters (Common emitter) V CE =3V , IC =20mA, Z O =50Ω
No.8290-14/15 S Parameters (Common emitter) V CE =3V , IC =25mA, Z O =50Ω
No.8290-15/15 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS