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- Manufacturer or author: Provided By digicamel.com
- PDF pages: 15
Technical content
Features
- Low-noise use : NF=1.2dB typ (f=2GHz).
- High cut-off frequency : fT=14.5GHz typ (VCE =1V). :fT=22GHz typ (VCE =3V).
- Low operating voltage.
- High gain : S21e2=14dB typ (f=2GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9V Collector-to-Emitter Voltage VCEO 3.5 V Emitter-to-Base Voltage VEBO 2V Collector Current IC 35 mA Collector Dissipation PC 120 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB =5V, IE=0 1.0 µA Emitter Cutoff Current IEBO VEB =1V, IC =0 1 µA DC Current Gain hFE VCE =3V, IC =15mA 80 160 Gain-Bandwidth Product fT1V CE =1V, IC =5mA 14.5 GHz fT2V CE =3V, IC =15mA 18 22 GHz Reverse Transfer Capacitance Cre V CB =1V, f=1MHz 0.18 pF Forward Transfer Gain S21e 21V CE =1V, IC =5mA, f=2GHz 9.5 11 dB S21e 22V CE =3V, IC =15mA, f=2GHz 14 dB Noise Figure NF V CE =1V, IC =5mA, f=2GHz 1.2 dB Marking : NF SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005AB TS IM TB-00000431 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 2SC6023 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications
No.8143-2/15 Package Dimensions unit : mm 2161A 1.15 2.0 0.612 3 4 2.1 1.25 0.4250.425 0.2 0.9 0.20.3 1.3 0.15 0.05 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IT08188 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IT08189 hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE IT08392 Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF IT08191 02 3 4 1 IB =0 250µA 225µA 200µA 175µA 150µA 125µA 100µA 75µA 50µA 25µA VCE =3V 1V 0.1 23 5 7 1.0 23 5 7 10 0.1 f=1MHz 1000 100 0.1 325 1.073 25 7 3 25 710 V CE =3V
No.8143-3/15 --30 --40 --10 --20 Input Level, Pin -- dB Output Level, Pout -- dB IT08195 Pin -- Pout 1.0 10 10023 5 7 723 5 Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz IT08194 fT -- IC Collector Current, IC -- mA Noise Figure, NF -- dB IT08197 NF -- IC 0 5 10 15 20 25 30 35 40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector Current, IC -- mA Noise Figure, NF -- dB IT08196 NF -- IC f=2.0GHz V CE =3V IC =15mA f=2.0GHz V CE =3V 1.0 23 5 7 23 5 7 10 100 ‰S21e‰2 -- IC Collector Current, IC -- mA Forward Transfer Gain,‰S21e‰2 -- dB IT08192 1.0 23 5 7 23 5 7 10 100 ‰S21e‰2 -- IC Collector Current, IC -- mA Forward Transfer Gain,‰S21e‰2 -- dB IT08193 f=1GHz f=2GHz 0 20 40 60 80 100 120 140 160 IT08198 Collector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C 100 120 140 Z S=50W Z S=Zsopt Z S=Zsopt Z S=50W V CE=3V V CE =3V V CE =3V 0 5 10 15 20 25 30 35 40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Z S=50W Z S=Zsopt f=2.0GHz V CE =1V
No.8143-4/15 SPICE PARAMETERS model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 124.2a A TF 4.500p S BF 168.7 XTF 10.00m NF 1.007 VTF 8 V V AF 5.762 V ITF 549.7m A IKF 141.1m A PTF 25 °C ISE 181.0f A CJC 168.1f F NE 2.295 VJC 165.7m V BR 11.54 MJC 571.4m NR 1 XCJC 330.0m V AR 3.43 V TR 10.00p S IKR 21.00m A FC 800.0m ISC 1.800f A CJS 0 F NC 1.24 VJS 0 V RB 2.86 Ω MJS 0 IRB 100.0µ A LE 415.0p F RBM 1.254 Ω LB 2.300n F RE 1.297 Ω LC 989.3p F RC 2.552 Ω Cbc 20.00f F XTB 0 Cce 505.0f F EG 1.11 eV Cbe 320.0f F XTI 3 CCB 212.0f H CJE 98.40f F CEC 580.0f H VJE 10 V CEB 320.0f H MJE 100.0m SCHEMATIC *Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Le Lb Cbe CEB Cce Cbc CCB CEC Lc IT08199
No.8143-5/15 S Parameters (Common emitter) V CE =1V , IC =5mA, Z O =50Ω
No.8143-6/15 S Parameters (Common emitter) V CE =1V , IC =10mA, Z O =50Ω
No.8143-7/15 S Parameters (Common emitter) V CE =1V , IC =15mA, Z O =50Ω
No.8143-8/15 S Parameters (Common emitter) V CE =1V , IC =20mA, Z O =50Ω
No.8143-9/15 S Parameters (Common emitter) V CE =1V , IC =25mA, Z O =50Ω
No.8143-10/15 S Parameters (Common emitter) V CE =3V , IC =5mA, Z O =50Ω
No.8143-11/15 S Parameters (Common emitter) V CE =3V , IC =10mA, Z O =50Ω
No.8143-12/15 S Parameters (Common emitter) V CE =3V , IC =15mA, Z O =50Ω
No.8143-13/15 S Parameters (Common emitter) V CE =3V , IC =20mA, Z O =50Ω
No.8143-14/15 S Parameters (Common emitter) V CE =3V , IC =25mA, Z O =50Ω
No.8143-15/15 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS