2SC6015 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of MBIT process.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Narrow hFE range.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 15 V Collector-to-Emitter Voltage V CEO 15 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 9A Collector Current (Pulse) I CP 12 A Base Current I B 1.2 A Collector Dissipation P C Mounted on a ceramic board (250mm25 0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =12V, IE=0A 0.1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0A 0.1 µA DC Current Gain h FE VCE =2V, IC =500mA 250 400 Marking : QC Continued on next page. D2005EA MS IM TB-00001976 2SC6015 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

No.8558-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE =2V, IC =500mA 280 MHz Output Capacitance Cob V CB =10V, f=1MHz 50 pF Collector-to-Emitter Saturation Voltage VCE (sat) IC =3A, IB=60mA 90 135 mV IC =4.5A, IB=90mA 135 205 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =3A, IB=60mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0A 15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 15 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0A 6 V Turn-ON Time t on See specified Test Circuit. 30 ns Storage Time t stg See specified Test Circuit. 180 ns Fall Time t f See specified Test Circuit. 25 ns Package Dimensions Switching Time Test Circuit unit : mm 7008-003 VR R B VCC =5V IC =20IB1 = --20IB2 =3A VBE = --5V + + 50Ω INPUT OUTPUT R L 470µF100µF PW=20 µs IB1 D.C.≤1% IB2 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 Top View Bottom View 1 : Base 2 : Collector 3 : Emitter SANYO : PCP IC -- VCE Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V IT09760 10mA 15mA 20mA 30mA50mA60mA 80mA 100mA IB =0mA 5mA Ta=75 --25 V CE =2V IT09761 40mA

No.8558-3/4 1.0 0.01 0.1 1.00.1 10 2 325 3725 37 100ms 500 µs 100 µs10ms 1ms DC operation IT09766 100 IT09764 Ta=75 --25 IT09765 IC / IB =20 25°C 1.0 Ta= --25°C 25°C 75°C IC / IB =50 IT09767 Ta=75°C 25°C --25°C 100 1000 100 1000 0.1 0.01 0.1 0.01 V CE =2V IT09762 IT09763 IC / IB =50 Ta=75 --25 25°C V CE =10V f=1MHz IT09777 10µsICP =12A IC =9A 1.5 1.3 0.5 1.0 2006 0 40 80 100 140 120 160 IT00187 VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Cob -- VCB VCE (sat) -- IC VBE (sat) -- IC Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V hFE -- IC fT -- IC Collector Current, IC -- A DC Current Gain, hFE Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A PC -- TaA S O Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Mounted on a ceramic board (250mm 250.8mm) Tc=25°C Single pulse Mounted on a ceramic board (250mm 25 0.8mm)

No.8558-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. PC -- Tc Case Temperature, Tc -- °C Collector Dissipation, PC -- W 4.0 3.5 3.0 2.0 1.5 1.0 0.5 2.5 2006 0 40 80 100 140 120 160 IT01871