2SC5990 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of FBET and MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Narrow hFE width.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 100 V Collector-to-Emitter Voltage V CES 100 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 4A Collector Current (Pulse) I CP 7A Base Current I B 600 mA Collector Dissipation P C Mounted on a ceramic board (250mm25 0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =40V, IE=0A 0.1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0A 0.1 µA DC Current Gain h FE VCE =2V, IC =500mA 250 400 Gain-Bandwidth Product f T VCE =10V, IC =500mA 400 MHz Marking : FH Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62005 MS IM / 21405EA TS IM TB-00000376

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 2SC5990 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

No.8118-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Output Capacitance Cob V CB =10V, f=1MHz 15 pF Collector-to-Emitter Saturation Voltage VCE (sat) IC =1A, IB=50mA 65 100 mV IC =2A, IB=100mA 110 165 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =2A, IB=100mA 0.88 1.3 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0A 100 V Collector-to-Base Breakdown Voltage V (BR)CES IC =100µA, RBE =0Ω 100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0A - 6 V Turn-ON Time t on See specified Test Circuit. 35 ns Storage Time t stg See specified Test Circuit. 300 ns Fall Time t f See specified Test Circuit. 20 ns Package Dimensions Switching Time Test Circuit unit : mm 7007-004 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 Top View Bottom View 1 : Base 2 : Collector 3 : Emitter SANYO : PCP IT08356 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A V CE =2V Ta=75 --25 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 0.5 1.0 1.5 2.0 3.0 4.0 2.5 3.5 IT09552 IB =0mA 5mA 10mA 15mA 20mA 30mA 40mA 50mA 80mA 60mA 100mA VR 10 R L=25Ω VCC =25VVBE = - -5V 10IB1= - -10IB2= IC =1A + +50Ω INPUT OUTPUT R B 100µF 470 µF PW=20 µs IB1 IB2D.C.≤1%

No.8118-3/4 IT08360 0.10.01 7532 1.0755323 2 VBE (sat) -- IC Collector Current, IC -- AIT08361 1.0 IT08362 0.10.01 7533 5 722 1.07532 VCE (sat) -- IC Collector Current, IC -- A 0.1 1.0 0.01 PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V 0.1 23 5 7 1.0 23 5 7 10 23 5 7 IT08363 0.1 1.0 0.01 0.10.01 7533 522 1.077532 VCE (sat) -- IC Collector Current, IC -- A 0.1 0.01 Ta=75 25°C --25 IC / IB =20 DC operation (Ta=25 °C) IC =4A ICP =7A 500 µs 1ms 100ms 10ms <10µs 100 µs IC / IB =50 Ta=75 25°C --25°C Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V Tc=25°C Single pulse IT08358 IT08359 0.01 0.1 1.023 5 5 5 7 77 22 33 100 1000 Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz fT -- IC V CE =10V f=1MHz 0.1 1.0 1023 5 7 23 5 7 10023 5 7 100 Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Cob -- VCB IC / IB =50 Ta= --25°C 25°C 75°C 0.4 0.2 0.6 0.8 1.0 1.3 1.2 1.4 2006 0 40 80 100 140 120 160 IT08364 Mounted on a ceramic board (250mm 250.8mm) IT08357 hFE -- IC Collector Current, IC -- A DC Current Gain, hFE 100 0.01 325 0.173 3 22 55 77 1.0 10 V CE =2V Ta=75°C 25°C --25°C

No.8118-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS PC -- Tc Collector Dissipation, PC -- W Case Temperature, Tc -- °C 4.0 0.5 160200 IT08365 40 60 80 100 120 140 1.0 1.5 2.0 2.5 3.0 3.5