2SC5979 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of FBET, MBIT process.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Narrow hFE width.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 100 V Collector-to-Emitter Voltage V CES 100 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 5A Collector Current (Pulse) I CP 7.5 A Base Current I B 1.2 A Collector Dissipation P C 0.8 W Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =40V, IE=0 0.1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0 0.1 µA DC Current Gain h FE VCE =2V, IC =500mA 250 400 Continued on next page. 21405EA TS IM TB-00000319 2SC5979 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

No.8070-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE =10V, IC =500mA 400 MHz Output Capacitance Cob V CB =10V, f=1MHz 15 pF Collector-to-Emitter Saturation Voltage VCE (sat) IC =1A, IB=50mA 70 105 mV IC =2A, IB=100mA 120 180 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =2A, IB=100mA 0.88 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0 100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC =100µA, RBE =0 100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0 6 V Turn-ON Time t on See specified Test Circuit. 35 ns Storage Time t stg See specified Test Circuit. 300 ns Fall Time t f See specified Test Circuit. 20 ns Package Dimensions Package Dimensions unit : mm unit : mm 2045B 2044B Switching Time Test Circuit 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3 VR 10 R B VCC =25V IC =10IB1 = --10IB2 =1A VBE = --5V + +50Ω INPUT OUTPUT R L 470µF100µF PW=20 µs IB1 D.C.≤1% IB2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6

No.8070-3/4 IC -- VCE Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Cob -- VCB VCE (sat) -- IC VBE (sat) -- IC Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V hFE -- IC fT -- IC Collector Current, IC -- A DC Current Gain, hFE Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A 5.0 4.5 3.5 4.0 2.5 3.0 1.0 1.5 2.0 0.5 IT08228 10mA 15mA 20mA 40mA 60mA 80mA 100mA IB =0 5mA Ta=75 --25 V CE =2V IT08229 30mA IT08234 IT08232 Ta=75 --25 IT08233 IC / IB =20 25°C 1.0 Ta= --25°C 25°C 75°C IC / IB =50 IT08235 Ta=75°C 25°C --25°C 100 1000 100 1000 0.1 0.01 0.1 0.01 1.0 V CE =2V IT08230 IT08231 IC / IB =50 Ta=75 --25 25°C V CE =10V f=1MHz

No.8070-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. 2006 0 40 80 100 140 120 160 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V 0.01 0.1 1.0 1.00.1 10 100 25 3725 3725 37 ICP =7.5A 100ms 10ms 1ms IC =5A IT08236 Collector Dissipation, PC -- W 2006 0 40 80 100 140 120 160 PC -- Ta IT02981 Collector Dissipation, PC -- W PC -- Tc IT02982 DC operation ( Tc=25 °C) DC operation ( Ta=25 °C) 500 µs 100 µs No heat sink Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C 10µs Tc=25°C Single Pulse