2SC5968 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High-speed.
  • High breakdown voltage (VCBO =1700V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 1700 V Collector-to-Emitter Voltage V CEO 800 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 25 A Collector Current (Pulse) I CP 50 A Collector Dissipation P C 3.5 W Tc=25°C2 1 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB =800V, IE=0 10 µA ICES VCE =1700V, RBE =0 1.0 mA Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =10mA, RBE =∞ 800 V Emitter Cutoff Current I EBO VEB =4V, IC =0 1.0 mA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5968 Package Dimensions unit : mm 2048B [2SC5968] 31504KD TS IM TA-100727 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 20.0 1.2 2.0 3.4 3.3 0.6 5.0 1.02.0 20.7 26.0 12 3 5.455.45 2.8 6.0

No.7615-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit DC Current Gain hFE 1V CE =5V, IC =1A 15 hFE 2V CE =5V, IC =18A 4 7 Collectoe-to-Emitter Saturation Voltage VCE (sat) I C =16A, IB=4A 3 V Base-to-Emitter Saturation Voltage V BE (sat) I C =16A, IB=4A 1.5 V Storage Time t stg IC =12A, IB1=2.0A, IB2=--6.0A 3.0 µs Fall Time t f IC =12A, IB1=2.0A, IB2=--6.0A 0.2 µs Switching Time Test Circuit VR R B VCC =200VVBE = --5V + + 50Ω INPUT OUTPUT R L=16.7Ω 100µF 470 µF PW=20 µs D.C.≤1% IB1 IB2 IT06377 IC -- VCE IT06376 VCE (sat) -- IC IC -- VBE IT06379 hFE -- IC IT06378 --40 °C25 Ta=120 V CE =5V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE Collector-to-Emitter Saturation V oltage, VCE (sat) -- V 01 0 987654321 IB =0 0.1A 0.2A 0.4A 0.6A 0.8A 1.0A 1.2A 1.4A 1.6A 1.8A 2.0A 100 1.0 0.1 325 7 3 25 7 2 31.0 10 0.1 325 7 3 25 7 2 31.0 10 1.0 0.1 0.01 Ta= --40°C 120°C 120°C --40 °CTa=120°C --40°C 25°C V CE =5V IC / IB =5 25°C

No.7615-3/4 Reverse Bias A S O PC -- Ta PC -- Tc 0 20 40 60 80 100 120 140 160 IT06385 IT06383 Forward Bias A S O 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 IT06382 IT06384 0.1 250 200 210 150 100 0.01 100 1.0 IC =25A ICP =50A 100 µs 1ms 10ms DC operation PC =210W Collector Dissipation, PC -- W Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Tc=25°C Single pulse 300 µs IT06380 SW Time -- IC IT06381 SW Time -- IB2 Switching Time, SW Time -- µs Collector Current, IC -- A Switching Time, SW Time -- µs Base Current, IB2 -- A 0.1 1.0 0.1 35 7 1.0 22 35 7 2 10 23 5 7 23 5 7 20.1 1.0 10 tf 0.1 1.0 tstg V CC =200V IC / IB1 =6 IB2 / IB1 =3 R load V CC =200V IC =12A IB1 =2.0A R loadtstg tf 0.1 1.0 100 4.0 3.0 3.5 2.5 2.0 1.5 1.0 0.5 160140120100806040200 100 1000 23 5 7 23 IB2 = --5A L=100 µH Tc=25°C Single pulse No heat sink

No.7615-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS