2SC5960 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High breakdown voltage and high reliability.
  • High-speed switching.
  • Wide ASO.
  • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 500 V Collector-to-Emitter Voltage V CEO 400 V Emitter-to-Base Voltage V EBO 7V Collector Current I C 7A Collector Current (Pulse) I CP PW ≤300µs, Duty Cycle≤10% 14 A Base Current I B 3A Collector Dissipation P C 2.5 W Tc=25°C6 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =400V, IE=0 10 µA Emitter Cutoff Current I EBO VEB =5V, IC =0 10 µA Continued on next page. 2SC5960 Switching Regulator Applications Package Dimensions unit : mm 2022A [2SC5960] 31504KB TS IM TA-100660 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 15.6 2.6 3.51.2 14.0 1.6 1.0 2.0 0.6 20.0 20.0 15.0 1.3 3.2 4.8 2.0 0.6 5.455.45 1.4 1 2 3 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

No.7610-2/4 02 6 4813 7 59 10 IC -- VCE IT05057 1000mA IB =0 300mA 200mA 100mA 400mA 500mA 600mA 700mA 800mA 900mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter ON-State V oltage, VBE (on) -- V Collector Current, IC -- A IT05149 IC -- VBE (on) V CE =5V Ta=120 --40 Collector Current, IC -- A DC Current Gain, hFE 100 2 3 57 2 3 57 2 3 570.10.01 1.0 10 hFE -- IC IT05151 V CE =5V Ta=120°C 25°C --40°C Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V 0.1 0.01 1.0 325 7 325 7 325 71.00.01 0.1 10 VCE (sat) -- IC IT05152 IC / IB =5 Ta= --40°C Ta=120 120°C --40 25°C Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit hFE 1V CE =5V, IC =0.8A 20* 50* DC Current Gain h FE 2V CE =5V, IC =4A 10 hFE 3V CE =5V, IC =1mA 10 Collector-to-Emitter Saturation VoltageVCE (sat) I C =4A, IB=0.8A 0.8 V Base-to-Emitter Saturation Voltage V BE (sat) I C =4A, IB=0.8A 1.5 V Gain-Bandwidth Product f T VCE =10V, IC =0.8A 15 MHz Output Capacitance Cob V CB =10V, f=1MHz 50 pF Collector-to-Base Breakdown Voltage V (BR)CBO IC =1mA, IE=0 500 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =5mA, RBE =∞ 400 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA, IC =0 7 V Turn-On Time t on IC =5A, IB1=1A, IB2=- -2A, RL=40Ω , VCC =200V 0.5 µs Storage Time t stg IC =5A, IB1=1A, IB2=- -2A, RL=40Ω , VCC =200V 2.5 µs Fall Time t f IC =5A, IB1=1A, IB2=- -2A, RL=40Ω , VCC =200V 0.3 µs * : The hFE 1 of the 2SC5960 is classified as follows. Rank M N hFE 20 to 40 30 to 50 Switching Time Test Circuit D.C.≤1% VR R B VCC =200VVBE = --5V + + 50Ω INPUT OUTPUT R L 100µF 470 µF PW=20 µs IB1 IB2

No.7610-3/4 Reverse Bias A S O IT05863 0.1 1.0 10010571.0 23 5 7 23 10005723 IT05063 ICP Tc=25°C IB2 = --1.2A Const. L=500 µH Forward Bias A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter Sustain V oltage, VCEX (sus) -- V Collector Current, IC -- A IT05864 Collector Current, IC -- A SW Time -- IC Switching Time, SW Time -- µs 0.1 0.01 1.0 1.00.1 23 5 723 5 7 10 IT05923 tstg tf V CC =200V IC/IB =5 IB2/IB1 = --2.5 R load IT05150 1.0 0.01 7532 0.1 7532 1.0 7532 10 VBE (sat) -- IC IC / IB =5 Ta= --40°C 120°C 25°C Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V 0.1 0.01 1.0 1001057 2 31.0 23 5 7 23 5 7 IT06395 10ms 1msDC operation S / B Limited 100 µs ≤50µsICP =14A IC =7A Tc=25°C Single pulse 0.5 1.0 1.5 2.0 3.0 2.5 PC -- Ta 4020 100 12060 80 140 160 Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W No heat sink PC -- Tc 4020 100 12060 80 140 160 Collector Dissipation, PC -- W Case Temperature, Tc -- °C

No.7610-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS