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1Publication date: June 2004 SJD00306BED 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor ■ Features
- High breakdown voltage: VCBO ≥ 1 700 V
- High-speed switching: tf < 200 ns
- Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Unit: mm Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Parameter Symbol Conditions Min Typ Max Unit Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 05 0 µA VCB = 1 700 V, IE = 01 m A Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 05 0 µA Forward current transfer ratio h FE VCE = 5 V, IC = 10 A 5 12 Collector-emitter saturation voltage V CE(sat) IC = 10 A, IB = 2.5 A 3 V Base-emitter saturation voltage V BE(sat) IC = 10 A, IB = 2.5 A 1.5 V Transition frequency f T VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz Storage time t stg IC = 10 A, Resistance loaded 3.0 µs Fall time t f IB1 = 2.5 A, IB2 = −5.0 A 0.2 µs Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 1 700 V Collector-emitter voltage (E-B short) V CES 1 700 V Collector-emitter voltage (Base open) V CEO 600 V Emitter-base voltage (Collector open) V EBO 7V Base current I B 8A Collector current I C 20 A Peak collector current * ICP 30 A Collector power dissipation P C 70 W Ta = 25°C 3.5 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C 15.5±0.5 3.0±0.3 (4.0) 2.0±0.2 1.1±0.1 5.45±0.3 0.7±0.1 5˚ 5˚ 10.9±0.5 (10.0)(1.2) (2.0) Solder Dip3.3±0.3 5.5±0.3 (2.0) 26.5±0.5 (23.4) 22.0±0.5 18.6±0.5 (2.0) φ 3.2±0.1 (4.5) Note) *: Non-repetitive peak collector current 1: Base 2: Collector 3: Emitter EIAJ: SC-94 Internal Connection B C E
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PC Ta IC VCE IC VBE VCE(sat) IC hFE VCE tf IB(END) tstg IB(END) Area of safe operation Area of safe operation (Horizontal operation) 0 50 100 150 Ambient temperature Ta (°C) Collector power dissipation PC (W) Without heat sink 02468 1 0 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A 0.4 A 0.2 A IB = 0 A Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) Base-emitter voltage VBE (V) 0 0.4 0.8 1.2 Ta = 120°C −40°C 25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) 10−2 10−1 10−1 11 0 210 Ta = 120°C −40°C 25°C 102 10−2 10−1 11 0 1 0 2 Ta = 120°C −40°C 25°C Forward current transfer ratio hFE Collector-emitter voltage VCE (V) Fall time tf (ns) Base current IB(END) (A) 200 400 600 800 1 000 0.4 0.8 1.2 1.6 fH = 32 kHz IC = 10 A L load 0.4 0.8 1.2 1.6 2.0 0.4 0.8 1.2 1.6 Storage time tstg (µs) Base current IB(END) (A) fH = 32 kHz IC = 10 A L load Collector current IC (A) Collector-emitter voltage VCE (V) 10−1 10−2 10−3 102 11 0 1 0 2 103 ICP = 30 A IC = 20 A DC operation t = 100 µs 1 ms 10 ms TC = 25°C Single pulse PC = 70 W 30 01 000500 1 500 2 000 Collector current IC (A) Collector-emitter voltage VCE (V) < 1 mA fH = 32 kHz, TC < 90°C ASO for a single pulse load caused by EHT flashover during horizontal operation.
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