2SC5902 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

iscWebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5902

DESCRIPTION

  • High Breakdown Voltage
  • Built-indamperdiodetype
  • High Switching Speed
  • WideArea ofSafeOperation
  • 100% avalanche tested
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • Designedforhigh voltagecolordisplay horizontal deflectionoutput applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1700 V VCES Collector-EmitterVoltage 1700 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 9 A ICM CollectorCurrent-Peak 14 A PC CollectorPowerDissipation @TC=25℃ 40 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

iscWebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5902 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=4.5A;IB=1.13A 3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=4.5A;IB=1.15A 1.5 V ICBO CollectorCutoffCurrent VCE=1000V;VBE=0 50 uA IEBO EmitterCutoffCurrent VEB=7V;IC=0 500 mA hFE DCCurrentGain IC=4.5A;VCE=5V 5 10 SwitchingTimes tstg StorageTime IC=4.5A,IB1=1.13A;IB2=-2.25A; 5.0 μs tf FallTime 0.5 μs