2SC5900 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC5900
DESCRIPTION
- High Breakdown Voltage- : V CBO = 1700V (Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base V oltage 1700 V V CEO Collector-Emitter V oltage 800 V V EBO Emitter-Base Voltage 5 V I C Collector Current- Continuous 8 A I CP Collector Current-Pulse 16 A P C Collector Power Dissipation @ T a =25℃ 3.0 W Collector Power Dissipation @ T C =25℃ 80 T J Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC5900
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V CEO(SUS) Collector-Emitter Sustaining Voltage I C = 100mA; I B = 0 800 V V CE (sat) Collector-Emitter Saturation Voltage I C = 4A; I B = 1A 3.0 V V BE (sat) Base-Emitter Saturation Voltage I C = 4A; I B = 1A 1.5 V I CBO Collector Cutoff Current V CB = 800V ; I E = 0 10 μA I CES Collector Cutoff Current V CE = 1700V ; R BE = 0 1.0 mA I EBO Emitter Cutoff Current V EB = 4V ; I C = 0 10 mA h FE-1 DC Current Gain I C = 1A ; V CE = 5V 10 h FE-2 DC Current Gain I C =4.5A ; V CE = 5V 4 9 tstg Storage Time IC= 3A ;IB1=0.5A; IB2= -1.5A 3.0 μs tf Fall Time IC= 3A ;IB1=0.5A; IB2= -1.5A 0.2 μs