Download PDF2SC5846 PANASONIC
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1Publication date: August 2003 SJC00298AED 2SC5846 Silicon NPN epitaxial planar type For general amplification ■ Features
- High forward current transfer ratio hFE
- SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µΑ, IE = 06 0V Collector-emitter voltage (Base open) V CEO IC = 2 mA, IB = 05 0 V Emitter-base voltage (Collector open) V EBO IE = 10 µΑ, IC = 07V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, I B = 0 100 µA Forward current transfer ratio h FE VCE = 10 V, IC = 2 mA 180 390 Collector-emitter saturation voltage V CE(sat) IC = 100 mA, I B = 10 mA 0.1 0.3 V Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF (Common base, input open circuited) Transition frequency f T VCB = 10 V, IE = −2 mA, f = 200 MHz 100 MHz ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 60 V Collector-emitter voltage (Base open) V CEO 50 V Emitter-base voltage (Collector open) V EBO 7V Collector current I C 100 mA Peak collector current I CP 200 mA Collector power dissipation P C 100 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Marking Symbol: 7K 1.20±0.050.52±0.03 0 to 0.01 0.15 max. 0.15 min. 0.80±0.050.15 min. 0.33 (0.40)(0.40) 0.80±0.05 1.20±0.05 +0.05 –0.02 0.10+0.05 –0.02 0.23+0.05 –0.02 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. SSSMini3-F1 Package
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IC VBE IB VBE VCE(sat) IC PC Ta IC VCE IC IB hFE IC Cob VCB 0 20 40 60 80 100 120 140 120 100 Collector power dissipation PC (mW) Ambient temperature Ta (°C) 04 26 8 1 0 1 2 Collector current IC (mA) Collector-emitter voltage VCE (V) IB = 160 µA 140 µA 100 µA 80 µA 60 µA 40 µA 20 µA 120 µA Ta = 25°C 140 120 100 Collector current IC (mA) Base current IB (mA) VCE = 10V Ta = 25°C 100 120 Collector current IC (mA) Base-emitter voltage VBE (V) VCE = 10V Ta = 75°C –25°C 25°C 0 0.2 0.4 0.6 0.8 3.5 0.5 1.0 1.5 2.0 2.5 3.0 Base current IB (mA) Base-emitter voltage VBE (V) VCE = 10V Ta = 25°C 1 10 100 0.01 0.1 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) Ta = 75°C –25°C 25°C IC / IB = 10 1 10 100 1 000 100 150 200 250 300 350 Collector current IC (mA) Forward current transfer ratio hFE Ta = 75°C –25°C 25°C VCE = 10V 01 6 82 4 3 2 4 0 Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) f = 1 MHz Ta = 25°C
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