Download PDF2SC5838 PANASONIC
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1Publication date: December 2002 SJC00288AED Transistors ■ Electrical Characteristics Ta = 25°C ± 3°C 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features
- Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 01 5 V Collector-emitter voltage (Base open) V CEO IC = 100 µA, IB = 01 0 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 01 µA Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 01 µA Forward current transfer ratio h FE VCE = 8 V, IC = 20 mA 110 250 Forward transfer gain S21e2 VCE = 8 V, IC = 20 mA, f = 800 MHz 7.5 10.0 dB Noise figure NF V CE = 8 V, IC = 20 mA, f = 800 MHz 1.7 dB Maximum unilateral power gain G UM VCE = 8 V, IC = 20 mA, f = 800 MHz 11.5 dB Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 0.9 1.2 pF (Common base, input open circuited) Transition frequency f T VCE = 8 V, IC = 20 mA, f = 800 MHz 5.0 6.0 GHz Unit: mm 0.60±0.05 1.00±0.05 0.39+0.01 −0.03 0.50±0.05 0.65±0.01 0.15±0.05 0.35±0.01 Marking symbol: 1F 1: Base 2: Emitter 3: Collector Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 15 V Collector-emitter voltage (Base open) V CEO 10 V Emitter-base voltage (Collector open) V EBO 2V Collector current I C 80 mA Collector power dissipation P C 100 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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PC Ta IC VCE VCE(sat) IC hFE IC Cob VCB 0 140 6020 80 12040 100 120 100 Collector power dissipation PC (mW) Ambient temperature Ta (°C) 01 2 21 0 48 6 Collector-emitter voltage VCE (V) Collector current IC (mA)60 100 µA 200 µA 300 µA 400 µA 500 µA IB = 600 µA Ta = 25°C 0.01 10 1 000100 IC / IB = 10 0.1 Ta = 85°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 1 10 100 1 000 200 160 120 VCE = 8 V Ta = 85°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (A) 0 5 10 15 20 25 0.1 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF)
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