2SC5832 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High DC current gain.
  • Wide ASO.
  • On-chip zener diode of 65±10V between collector and base.
  • Uniformity in collector-to-base voltage.
  • Large inductive load handling capability. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5832 Package Dimensions unit : mm 2045B [2SC5832] GI IM Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor Driver Applications

13003 TS IM TA-3670

1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3 unit : mm 2044B [2SC5832] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6

No.7287-2/4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO On-chip zener diode(65±10V) 55 V Collector-to-Emitter Voltage V CEO On-chip zener diode(65±10V) 55 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 2A Collector Current (Pulse) I CP 4A Collector Dissipation P C 1.0 W Tc=25°C1 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =40V, IE=0 10 µA Emitter Cutoff Current I EBO VEB =5V, IC =0 2 mA DC Current Gain h FE VCE =5V, IC =1A 1000 4000 Gain-Bandwidth Product f T VCE =5V, IC =1A 180 MHz Inductive Load Es / b L=100mH, R BE =100Ω 25 mJ Collector-to-Emitter Saturation Voltage VCE (sat) I C =1A, IB=4mA 1.0 1.5 V Base-to-Emitter Saturation Voltage V BE (sat) I C =1A, IB=4mA 2.0 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =100µA, IE=0 55 65 75 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 55 65 75 V Turn-ON Time t on See specified Test Circuit. 0.2 µs Storage Time t stg See specified Test Circuit. 3.5 µs Fall Time t f See specified Test Circuit. 0.5 µs Switching Time Test Circuit Es / b Test Circuit VBB = --5V V CC =20V +V CC INPUT OUTPUT 100µF 470 µF 50Ω R B R L 20ΩVR IC =250A, IB1= --250A, IB2=1A PW=50 µs, Duty Cycle≤1% IB1= --IB2=4mA TUT R BE IB VCC =20V, RBE =100Ω TUT L 300Ω10kΩ SW 2.0 1.6 0.4 0.8 1.2 01 3 24 5 IC -- VCE IB =0 150µA 200µA 250µA 300µA 1000µA 1500 µA 2000 µA 350µA 400µA 450µA 500µA ITR06005 2.4 1.6 2.0 1.2 0.8 0.4 IC -- VBE ITR06006 Ta=120 --40 V CE =5V Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A

No.7287-3/4 PC -- Ta IT04366 1.0 23 5 7 10 23 23 57 100 IC -- L ITR06011 R BE =100Ω Tc=25°C VBE (sat) -- IC ITR06010 0.1 1.0 0.01 100.1 1.023 5 7 23 5 7 23 5 7 IT04365 A S O 25mJ VCE (sat) -- IC IT04364 1.0 23 5 70.1 1.0 23 5 Ta= --40°C 120°C IC / IB =250 1.0 23 5 70.1 1.0 23 5 IC / IB =250 Ta= --40°C 25°C 120°C25°C 10ms 100 µs1ms Ta=25 °C, DC operation Tc=25 °CDC operation ICP =4A 10µs IC =2A L -- mH Ambient Temperature, Ta -- °C Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Dissipation, PC -- W 2006 0 40 80 100 160 140120 PC -- Tc IT05327 Collector Dissipation, PC -- W Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V 1000 100 10000 72 3 535 7 0.1 1.0 23 5 hFE -- IC ITR06007 V CE =5V Ta=120 25°C --40°C Cob -- VCB ITR06008 100 1000 23 5 70.1 1.0 23 5 7 10 23 5 f=1MHz Collector Current, IC -- A DC Current Gain, hFE Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Case Temperature, Tc -- °C 1.4 1.0 1.2 0.4 0.8 0.2 0.6 2006 0 40 80 100 160 140120 No heat sink

No.7287-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2003. Specifications and information herein are subject to change without notice. PS