2SC5764 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC5764
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 400V(Min)
- Fast Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A Total Power Dissipation @ Ta=25℃ 2 PC Total Power Dissipation @ T C=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC5764
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.8A; VCE= 5V 20 50 hFE-2 DC Current Gain IC= 4A; VCE= 5V 10 hFE-3 DC Current Gain IC= 1mA; VCE= 5V 10 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 80 pF fT Current-Gain—Bandwidth Product IC= 0.8A; VCE= 10V 17 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 2.5 μs tf Fall Time IC= 5A, IB1= 1A; IB2= -2A; RL= 40Ω; VCC= 200V 0.25 μs hFE-1 Classifications M N 20-40 30-50 isc Website：www.iscsemi.cn 2