2SA2044 SANYO

Document overview

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Technical content

Features

  • Adoption of FBET and MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SA2044 / 2SC5710 DC / DC Converter Applications

52101 TS IM TA-3249

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP / NPN Epitaxial Planar Silicon Transistors Package Dimensions unit : mm 2045B unit : mm 2044B [2SA2044 / 2SC5710] [2SA2044 / 2SC5710] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6

No.6915-2/5 Specifications ( ) : 2SA2044 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -30)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)9 A Collector Current (Pulse) I CP (- -)12 A Base Current I B (- -)1.2 A Collector Dissipation P C Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)30V, IE=0 (- -)0.1 µA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0 (- -)0.1 µA DC Current Gain h FE VCE =(- -)2V, IC =(- -)500mA 200 560 Gain-Bandwidth Product f T VCE =(- -)10V, IC =(- -)500mA (290)320 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (52)40 pF Collector-to-Emitter Saturation Voltage VCE (sat) Base-to-Emitter Saturation Voltage V BE (sat) I C =(- -)2.5A, IB=(- -)50mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0 (- -30)40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0 (- -)6 V Turn-On Time t on See specified test circuit. 30 ns Storage Time t stg See specified test circuit. (190)320 ns Fall Time t f See specified test circuit. 15 ns Swicthing Time Test Circuit VR R B VCC =12VVBE = --5V + +50Ω INPUT OUTPUT R L 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC =20IB1= --20IB2=2.5A For PNP , the polarity is reversed.

No.6915-3/5 --8 --6 --7 --4 --5 --2 --3 --1 IC -- VCE --10mA --20mA --30mA --40mA --50mA --60mA --70mA--80mA --90mA --100mA IB =0 IT00188 IC -- VBE 2SC5710 V CE =2V Ta=75 25°C --25 IT00191 Ta=75 25°C --25 2SA2044 V CE = --2V --8 --7 --6 --5 --4 --2 --1 --3 IC -- VBE IT00190 IC -- VCE IB =0 10mA 20mA 30mA 40mA 50mA 100mA 60mA70mA 80mA 90mA IT00189 2SA2044 2SC5710 Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- VCollector-to-Emitter V oltage, VCE -- V 1000 100 1.0 0.01 0.123 5 7 23 5 7 23 5 7 1.0 10 VCE (sat) -- IC Ta=75 25°C--25°C IT00196 2SC5710 IC / IB =20 --1000 --100 --10 --1.0 VCE (sat) -- IC Ta=75 25°C--25°C IT00194 2SA2044 IC / IB =20 Ta=75°C 25°C --25°C 1000 100 hFE -- IC 2SA2044 V CE = --2V IT00192 1000 100 0.01 325 100.173 25 7 3 25 71.0 hFE -- IC Ta=75°C --25°C 25°C 2SC5710 V CE =2V IT00193Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV

No.6915-4/5 --1000 --100 --10 VCE (sat) -- IC IT00195 Ta=75 25°C --25°C 2SA2044 IC / IB =50 VBE (sat) -- IC--10 --1.0 --0.1 Ta= --25°C 25°C 75°C 23 5 7 23 5 7 23 5 7 2SA2044 IC / IB =50 IT00198 1.0 0.1 0.01 0.1 1.0 10 Ta= --25°C 25°C 75°C 23 5 7 23 5 7 23 5 7 2SC5710 IC / IB =50 VBE (sat) -- IC IT00199 0.01 0.123 5 7 23 5 7 23 5 7 1.0 10 1000 100 VCE (sat) -- IC IT00197 Ta=75 25°C --25 2SC5710 IC / IB =50 Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V fT -- IC 100 1000 --0.01 25 777 7 3 --0.1 25 32 5 3--1.0 --105 IT00202 2SA2044 V CE = --10V fT -- IC 100 1000 0.01 25 777 7 3 0.1 25 32 5 31.0 105 IT00203 2SC5710 V CE =10V Cob -- VCB5 100 0.1 1.0 10 100 IT00201 2SC5710 f=1MHz 3725753 7 25 3 7 25 Cob -- VCB5 100 37--0.1 25753 7 25 3 7 25--1.0 --10 --100 IT00200 2SA2044 f=1MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Gain-Brandwidth Product, fT -- MHz Collector Current, IC -- A Gain-Brandwidth Product, fT -- MHz

No.6915-5/5PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice. 0.2 0.4 0.6 0.8 1.0 1.2 2006 0 40 80 100 140 120 160 PC -- Ta No heat sink 2006 0 40 80 100 140 120 160 PC -- Tc IT03041 A S O 1.0 0.1 0.01 1.0 1025 370.1 25 370.01 25 37 2 5 3 ICP =12A IC =9A IT03039 IT03040 2SA2044 / 2SC5710 Tc=25°C Single pulse For PNP, minus sign is omitted 10ms 2SA2044 / 2SC5710 2SA2044 / 2SC5710 DC operation(Ta=25 °C) DC operation(Tc=25 °C) 100 µs500 µs 1ms100ms Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Case Temperature, Tc -- °C Collector Dissipation, PC -- W