2SA2040_05 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Adoption of FBET and MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications ( ) : 2SA2040 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -50)100 V Collector-to-Emitter Voltage VCES (- -50)100 V Collector-to-Emitter Voltage VCEO (- -)50 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)8 A Collector Current (Pulse) ICP (- -)11 A Base Current IB (- -)2 A Collector Dissipation PC 1.0 W Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB =(- -)40V, IE=0A (- -)0.1 µA Emitter Cutoff Current IEBO VEB =(- -)4V, IC =0A (- -)0.1 µA DC Current Gain hFE VCE =(- -)2V, IC =(- -)500mA 200 560 Gain-Bandwidth Product fT VCE =(- -)10V, IC =(- -)500mA (290)330 MHz Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405EA MS IM TB-00001403 / 30101 TS IM TA-3233 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 2SA2040 / 2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors High Current Switching Applications

No.6913-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Output Capacitance Cob V CB =(- -)10V, f=1MHz (50)28 pF Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage V BE (sat) I C =(- -)2A, IB=(- -)40mA (- -)0.83 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0A (- -50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC =(- -)100µA, RBE =0Ω (- -50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0A (- -)6 V Turn-On Time t on See specified Test Circuit. (40)30 ns Storage Time t stg See specified Test Circuit. (225)420 ns Fall Time t f See specified Test Circuit. 25 ns Package Dimensions Package Dimensions unit : mm unit : mm 7518-003 7003-003 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP + +50Ω INPUT OUTPUT VR R B R L VCC =25V 100µF 470 µF VBE = - -5V PW=20 µs IB1 IB2 D.C.≤1% 20IB1 = - -20IB2 =IC =2.5A For PNP, the polarity is reversed. 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA

No.6913-3/5 IC -- VBE 2SC5707 V CE =2V Ta=75 --25 °C Ta=75 --25 2SA2040 V CE = --2V --8 --7 --6 --5 --4 --3 --2 --1 IC -- VBE IC -- VCE IB =0mA --7 --6 --5 --4 --3 --2 --1 IC -- VCE --10mA --20mA --30mA --40mA --50mA--60mA --70mA --80mA --90mA --100mA 10mA 20mA 30mA 40mA 50mA 60mA 70mA80mA90mA 100mA IB =0mA IT00206 IT00208 IT00207 IT00209 2SC5707 2SA2040 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --1000 --100 --1.0 --10 VCE (sat) -- IC Ta=75 25°C--25°C IT00212 2SA2040 IC / IB =20 1000 100 1.0 0.01 0.123 5 7 23 5 7 23 5 7 1.0 10 VCE (sat) -- IC Ta=75 --25°C IT00214 2SC5707 IC / IB =20 Ta=75°C 25°C --25°C 1000 100 hFE -- IC 2SA2040 V CE = --2V IT00210 1000 100 0.01 325 100.173 25 7 3 25 71.0 hFE -- IC Ta=75°C --25°C 25°C 2SC5707 V CE =2V IT00211Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV 25°C

No.6913-4/5 --10000 --1000 --10 --100 VCE (sat) -- IC IT00213 Ta=75 25°C--25°C 2SA2040 IC / IB =50 0.01 0.123 5 7 23 5 7 23 5 7 1.0 10 10000 1000 100 VCE (sat) -- IC IT00215 Ta=75°C 25°C --25°C 2SC5707 IC / IB =50 10000 1000 100 0.01 0.1 1.0 10 Ta= --25°C 25°C75°C 23 5 7 23 5 7 23 5 7 2SC5707 IC / IB =50 VBE (sat) -- IC IT00217 VBE (sat) -- IC--10000 --1000 --100 Ta= --25°C 25°C75°C 23 5 7 23 5 7 23 5 7 2SA2040 IC / IB =50 IT00216 Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- mV fT -- IC 100 1000 --0.01 25 773 2 5 7 32 5 7 3--0.1 --1.0 --105 IT00220 2SA2040 V CE = --10V fT -- IC 100 1000 0.01 25 773 2 5 7 32 5 7 30.1 1.0 105 IT00221 2SC5707 V CE =10V Cob -- VCB5 100 0.1 23 3 3 57757 1.0 2 10 255 IT00219 2SC5707 f=1MHz Cob -- VCB5 100 5 --0.1 23 377 52 3 7 5--1.0 --10 25 IT00218 2SA2040 f=1MHz Collector Current, IC -- A Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF

No.6913-5/5 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS 1.2 1.0 0.8 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 PC -- Ta IT02972 A S O 1.0 0.01 0.1 1.00.1 10 100 25 3725 3725 37 IT02971 100ms 10ms 1ms 500 µs 100 µs 2006 0 40 80 100 140 120 160 PC -- Tc IT02973 2SA2040 / 2SC5707 2SA2040 / 2SC5707 DC Operation (Ta=25 °C) DC Operation (Tc=25 °C) Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Case Temperature, Tc -- °C Collector Dissipation, PC -- W Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V 2SA2040 / 2SC5707 Tc=25°C Single pulse For PNP, the minus sign(--)is omitted No heat sink ICP =11A IC =8A