2SC5696 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5696
DESCRIPTION
- High speedswitching
- Built-indamperdiodetype
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedfordisplay horizontaldeflection output Switchingregulatorandgeneralpurpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1600 V VCEO Collector-EmitterVoltage 800 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 12 A IB BaseCurrent-Continuous 3 A PC CollectorPowerDissipation @TC=25℃ 85 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5696 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=100mA;IB=0 800 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=400mA;IC=0 6 V VCE(sat) Collector-EmitterSaturationVoltage IC=7.2A;IB=1.8A 3 V VBE(sat) Base-EmitterSaturationVoltage IC=7.2A;IB=1.8A 1.8 V ICBO CollectorCutoffCurrent VCB=1500V;IE=0 100 μA hFE-1 DCCurrentGain IC=1A;VCE=5V 3 11 hFE-2 DCCurrentGain IC=8A;VCE=5V 4 7