2SC5654 PANASONIC

Document overview

Silicon NPN epitaxial planer type For DC-DC converter Complementary to 2SA2028 I Features

Low collector to emitter saturation voltage V CE(sat)
S-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 20 V Collector to emitter voltage V CEO 20 V Emitter to base voltage V EBO 5V Peak collector current I CP 1A Collector current I C 3A Collector power dissipation P C 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage V CBO IC = 10 µA, IE = 02 0 V Collector to emitter voltage V CEO IC = 1 mA, IB = 02 0V Emitter to base voltage V EBO IE = 10 µA, IC = 05 V Forward current transfer ratio h FE VCE = 2 V, IC = 100 mA 160 560 Collector to emitter saturation voltage V CE(sat) IC = 200 mA, IB = 10 mA 60 100 mV Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 12 30 pF Transition frequency f T VCB = 10 V, IE = −10 mA, f = 200 MHz 180 MHz I Electrical Characteristics Ta = 25°C ± 3°C Marking Symbol: 2S 1: Base 2: Emitter 3: Collector S Mini Type Package (3-pin) 2.1±0.1 1.3±0.1 0.3+0.1 –0.0 2.0±0.2 1.25±0.10 (0.425) (0.65) (0.65) 0.2±0.1 0.9±0.10 to 0.1 0.9+0.2 –0.1 0.15+0.10 –0.05 10˚