2SC5622 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5622

DESCRIPTION

  • High Breakdown Voltage
  • High Switching Speed
  • LowSaturation Voltage
  • Widearea ofsafeoperation
  • 100% avalanche tested
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • Characterdisplay horizontaldeflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1500 V VCES Collector-EmitterVoltage 1500 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 6 A ICM CollectorCurrent-Continuous 12 A IB BaseCurrent-Continuous 3 A PC CollectorPowerDissipation @TC=25℃ 40 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5622 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=4A;IB=0.8A 5.0 V VBE(sat) Base-EmitterSaturationVoltage IC=4A;IB=0.8A 1.5 V ICBO CollectorCutoffCurrent VCB=1500V;IE=0 1.0 mA IEBO EmitterCutoffCurrent VEB=5V;IC=0 50 mA hFE DCCurrentGain IC=4A;VCE=5V 5 9 fT Current-Gain—BandwidthProduct IE=0.1A;VCE=10V 3 MHz Switchingtimes tstg StorageTime IC=4A,IB1=0.8A;IB2=-1.6A; 5 μs tf FallTime 0.5 μs