2SC5607 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 15 V Collector-to-Emitter Voltage V CEO 10 V Emitter-to-Base Voltage V EBO 7V Collector Current I C 5A Collector Current (Pulse) I CP 9A Base Current I B 1A Collector Dissipation PC 0.55 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5607 Package Dimensions unit : mm 2033A [2SC5607]

62502 TS IM TA-3603 / 21000 TS (KOTO) TA-2526

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor 1 : Emitter 2 : Collector 3 : Base SANYO : SPA 4.0 0.4 0.5 0.4 0.6 15.0 3.0 1.8 123 2.2 0.4 1.31.3 3.0 3.8nom 0.7 0.7

No.6403-2/4 + +50Ω INPUT OUTPUT VR R B R L VCC =5V 220µF 470 µF VBE = --5V PW=20 µs D.C.≤1% IB1 IB2 20IB1= --20IB2= IC =1.5A Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =10V, IE=0 0.1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0 0.1 µA DC Current Gain hFE 1V CE =2V, IC =500mA 600 hFE 2V CE =2V, IC =3A 200 Gain-Bandwidth Product f T VCE =2V, IC =500mA 380 MHz Output Capacitance Cob V CB =10V, f=1MHz 23 pF Collector-to-Emitter Saturation Voltage VCE (sat)1 IC =1.5A, IB=30mA 100 150 mV VCE (sat)2 IC =3A, IB=60mA 180 270 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =1.5A, IB=30mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0 15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 10 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0 7 V Turn-On Time t on See specified Test Circuit. 30 ns Storage Time t stg See specified Test Circuit. 210 ns Fall Time t f See specified Test Circuit. 11 ns Switching Time Test Circuit 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 1.5 1.0 0.5 2.0 10000 1000 100 0 12 4 3 5 V CE =2V V CE =2V IT01588 IT01589 IT01590 IT01591 IB =0 IB =0 1mA 10mA15mA20mA 40mA 3mA 5mA 1mA 2mA 10mA 15mA 20mA 25mA 4mA 6mA 8mA Ta=75 --25 Ta=75°C 25°C--25°C 4mA 2mA 25mA 60mA IC -- VCE IC -- VCE hFE -- ICIC -- VBE Collector-to-Emitter V oltage, VCE -- V Collecotr Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collecotr Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A DC Current Gain, hFE

No.6403-3/4 100 1000 1.0 0.1 0.01 V CE =2V 100 1000 1.0 1.0 0.1 100 1000 100 1.0 0.01 27 0.135 2 7 1.035 2 7 35 10 0.10.01 23 5 7 23 5 7 23 57 1.0 10 0.10.01 23 5 772 3 5 7 2 3 5 1.0 0 20 40 60 80 100 120 140 160 57 23 5 70.1 1.0 23 5 7 10 2 1.0 23 5 7 23 5 10 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 IC / IB =20 f=1MHz 0.1 0.3 0.2 0.4 0.5 0.55 0.7 0.6 0.8 IT01592 IT01593 IT01594 IT01595 IT01596 IT01598 IT01597 Ta=75 --25 25°C IC / IB =50 Ta=75 --25°C 25°C IC / IB =50 75°C Ta=--25°C 25°C 100 µs 1ms 100ms DC operation IC =5A ICP =9A Tc=25°C Single pulse A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A VCE (sat) -- IC VBE (sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV VCE (sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF PC -- Ta Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W

No.6403-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2002. Specifications and information herein are subject to change without notice. PS