2SC5584 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5584

DESCRIPTION

  • SiliconNPNtriple diffusionmesa type
  • HighSwitching Speed
  • HighBreakdown Voltage- :V(BR)CBO=1500V(Min)
  • MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation

APPLICATIONS

  • Designedforhorizontal deflection outputapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1500 V VCEO Collector-EmitterVoltage 600 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 20 A ICM CollectorCurrent-Pulse 30 A PC CollectorPowerDissipation @TC=25℃ 150 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5584 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=30mA;IB=0 600 V VCE(sat) Collector-EmitterSaturationVoltage IC=10A;IB=2.5A 3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=10A;IB=2.5A 1.5 V ICBO CollectorCutoffCurrent VCB=800V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=4V;IC=0 1.0 mA hFE DCCurrentGain IC=10A;VCE=5V 7 14 tstg StorageTime IC=10A,IB1=2.5A;IB2=-5A 2.7 μs tf FallTime 0.2 μs