2SC5580 PANASONIC

Document overview

Silicon NPN epitaxial planer type For high-frequency oscillation / switching I Features

High transition frequency f T
S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 15 V Collector to emitter voltage V CEO 8V Emitter to base voltage V EBO 3V Collector current I C 50 mA Collector power dissipation P C 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Marking Symbol: 3R Unit: mm 2.1±0.1 1.3±0.1 0.3+0.1 –0.0 2.0±0.2 1.25±0.10 (0.425) (0.65) (0.65) 0.2±0.1 0.9±0.10 to 0.1 0.9+0.2 –0.1 0.15+0.10 –0.05 10° Parameter Symbol Conditions Min Typ Max Unit Emitter cutoff current I EBO VEB = 2 V, IC = 02 µA Collector to base voltage V CBO IC = 100 µA, IE = 01 5 V Forward current transfer ratio h FE VCE = 4 V, IC = 2 mA 100 350 hFE ratio h FE(RATIO) VCE = 4 V, IC = 100 µA/2 mA 0.6 1.5 dB Collector to emitter saturation voltage V CE(sat) IC = 20 mA, IB = 4 mA 0.5 V Transition frequency f T VCE = 5 V, IC = 15 mA, f = 200 MHz 0.6 1.1 GHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 1.2 1.6 pF I Electrical Characteristics Ta = 25°C ± 3°C 1: Base 2: Emitter EIAJ: SC-70 3: Collector S-Mini Type Package