2SC5552 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5552

DESCRIPTION

  • High Breakdown Voltage
  • High Switching Speed
  • LowSaturation Voltage
  • Widearea ofsafeoperation
  • 100% avalanche tested
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • Characterdisplay horizontaldeflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1700 V VCEO Collector-EmitterVoltage 600 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 16 A ICM CollectorCurrent-Continuous 30 A IB BaseCurrent-Continuous 8 A PC CollectorPowerDissipation @TC=25℃ 65 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5552 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=8A;IB=2A 3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=8A;IB=2A 1.5 V ICBO CollectorCutoffCurrent VCB=1500V;IE=0 1.0 mA IEBO EmitterCutoffCurrent VEB=7V;IC=0 50 uA hFE DCCurrentGain IC=8A;VCE=5V 6 12 fT Current-Gain—BandwidthProduct IE=0.1A;VCE=10V 3 MHz Switchingtimes tstg StorageTime IC=8A,IB1=2A;IB2=-4A; 3.0 μs tf FallTime 0.2 μs