2SC5548A

2SC5548A_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

www.kexin.com.cn 1 Tran sistors NPN Transistors 2SC5548A ■ Features

• High speed switching
• High collector breakdown voltage
• High DC current gain 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 4 Base Current IB 0.5 Collector Power Dissipation Ta = 25℃ 1 Tc = 25℃ 15 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 PC W V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 600 Collector- emitter breakdown voltage VCEO Ic= 10 mA，IB=0 400 Emitter - base breakdown voltage VEBO IE= 1 mA， IC= 0 7 Collector-base cut-off current ICBO VCB= 480V , IE= 0 20 Emitter cut-off current IEBO VEB= 7V , IC=0 10 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=100mA 1 Base - emitter saturation voltage VBE(sat) IC=800mA, IB=100mA 1.3 VCE= 5V, IC=1mA 20 VCE= 5V, IC=200mA 40 100 Turn On Time ton 0.5 Storage Time tstg 3 Fall Time tf 0.3 DC current gain hFE V uA V us ■ Marking Marking C5548A IB1 = 0.1 A, IB2 = −0.2 A DUTY CYCLE ≤ 1% IB1 20 µs VCC ≈ 200 V INPUT OUT- PUT 250 Ω IB21 IB1 IB2 IC

www.kexin.com.cn2 Transistors NPN Transistors 2SC5548A ■ Typical Characterisitics Base-emitter saturation voltage VBE (sat) (V) Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) Collector current IC (A) hFE – IC DC current gain hFE Collector current IC (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) Collector current IC (A) VBE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) Collector power dissipation PC (W) Ambient temperature Ta (°C) PC – Ta 100 Common emitter Tc = 25°C 150 IB = 10 mA 1.6 1.2 0.4 2 4 6 8 10 0.8 2.0 200 0.01 Common emitter IC/IB = 8 Tc = 100°C −55 0.3 0.03 0.03 0.3 1 10 0.1 3 1.0 1000 0.001 Common emitter VCE = 5 V Tc = 100°C −55 300 100 0.01 Tc = 100°C 25 −55 0.3 0.1 0.1 0.3 3 Common emitter IC/IB = 8 130.0 (1) Tc = Ta infinite heat sink (2) No heat sink 0 25 50 75 100 125 150 175 200 (1) (2) 0.4 2.0 0 1.6 0.8 1.2 1.6 0.4 0.8 1.2 Common emitter VCE = 5 V Tc = 100°C −55 25

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SC5548A ■ Typical Characterisitics rth – tw Transient thermal resistance rth (°C/W) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (A) Pulse width tw (s) Collector current IC (A) Switching Characteristics – IC Switching time (µs) IC = 8IB1 2IB1 = −IB2 VCC ≈ 200 V Pulse width = 20µs Duty cycle ≤ 1％ Tc = 25°C 0.1 0.1 0.3 0.5 1 3 5 10 0.3 0.5 tstg tf Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 300 0.5 0.001 1000 0.01 0.1 1 10 100 100 (1) (2) *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) 0.001 DC operation Tc = 25°C 1 ms* 10 ms* VCEO max 100 µs* 100 ms* IC max (pulsed)* 1 3 100 100010 30 300 0.1 0.01 10 µs*3 0.3 0.5 0.03 0.05 0.003 0.005