2SC5548A TOSHIBA
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR APPLICATIONS. Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS somax 3 DC-DC CONVERTER APPLICATIONS [ezzoq| — 0620.15 bead p35 © High Speed Switching =: ty = 0.5 ys (Max.), tp = 0.3 vs (Max.) | oosmax_@ i y 2 osmax (Ig = 0.8 A) took oD fl @ High Collector Breakdown Voltage : VcRO = 400 V 2 28 3 Fy [es =| a = e High DC Current Gain : hyp = 40(Min.) (Ig = 0.2 A) ) zl S osto.s {8 Ee MAXIMUM RATINGS (Ta = 25°C) a.95Max 2 A 0640.15 J tL o.smax. CHARACTERISTIC SYMBOL UNIT 23," | ba 123 4 Collector-Base Voltage Vcpo [| 600 | V_ | = 3 Collector-Emitter Voltage Vcro [| 400 | Vv | al 1. pase Emitter-Base Voltage VEBO =] -2 COLLECTOR | pe ftw Te? “a. fuirren® Collector Current A 3, EMITTER [Pulse [ep | TEDEC — Storage Temperature Range —55~150 26100144 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-06-17 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xan. | rye. [max.[unrr] Collector Cut-off Current IcBo Vor = 480V, Ip = 0 | — | — [ 20 | pA | Emitter Cut-off Current | Ippo [Vg =7V, Ig = 0 b= p= oo a Collector-Base Breakdown _ _ ste woncofesiaain-« fw =[~|¥ Collector-Emitter be Current Gain [ire @_[Vor= 5V.1o= ima La f= VoE=5V,I¢=02A [a0 — [00 | Collector-Emitter Saturation FEEL vr focunmens [|= [ue] v Base-Emitter Saturation cs tie forteanenn [= [=f Voc = 200V 9S a Switchi eal at INPUT (Bt Vout witching . B2 pac 7 Time tea Pv -|-[ | < Fall Time tf Tp1 = 0.1A, pz = —0.24 0.3 DUTY CYCLE = 1% 1999-06-17 2/4
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0.001 0.01 Ol 1 10 100 1000 PULSE WIDTH ty (s) SAFE OPERATING AREA SWITCHING CHARACTERISTICS a — a a she wos, fuisto n= THE TI ss 9 ou MAN | a Re IIL iota Mom conmmuous ANNI TN Xi I g r tT = 20 ys CTIA NeNTNT LLL. meg 2 = bcomios Shea BSE ren ase 3 ogee RR tt gl © og} TAA = os—+—++ H+ 4+ HH = CTT SSATIN TNT ee oe eel SAT oa BSE i meme | 8 ysf AN Na J a 00H NO Nie S oos} oT oa eal g NN Ot 0305. «1 3. 5C«TO 0.008] SINGLE NONREPETIMIVE Hii} —}—-F HHH 0.003] PULSE Te = 25°C O01 a a Curves must be derated TTT) linearly with increase in | Vogq MAX. Hill sooi|_tmverstre, 310100300 1000 COLLECTOR-EMITTER VOLTAGE VcE (V) 7999-06-17 4/4