2SC5548A ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5548A
DESCRIPTION
- WithTO-252(DPAK)packaging
- Excellentlinearity ofhFE
- Lowcollector-to-emittersaturation voltage
- Fastswitchingspeed
- Complementaryto 2SB1204
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Relay drivers,high-speedinverters ,converters and Othergeneralhigh current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 600 V VCEO Collector-EmitterVoltage 400 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 2 A PC CollectorPowerDissipation 1 W CollectorPowerDissipation @TC=25℃ 15 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5548A ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base BreakdownVoltage IC=1mA;IB=0 600 V BVCEO Collector-EmitterBreakdownVoltage IC=10mA;IB=0 400 V VCE(sat) Collector-EmitterSaturationVoltage IC=0.8A;IB=0.1A 1.0 mV VBE(sat) Base-EmitterSaturationVoltage IC=0.8A;IB=0.1A 1.3 V ICBO CollectorCutoffCurrent VCB=480V;IE=0 20 μA IEBO EmitterCutoffCurrent VEB=7V;IC=0 10 μA hFE-1 DCCurrentCain IC=1mA;VCE=5V 20 hFE-2 DCCurrentCain IC=0.2A;VCE=5V 40 100