2SC5517 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5517

DESCRIPTION

  • High Breakdown Voltage- CBO= 1700V (Min)
  • High Switching Speed
  • Wide Area of Safe Operation
  • Built-in Damper Diode

APPLICATIONS

  • Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 6 A ICM Collector Current- Peak 12 A IB B Base Current- Continuous 3 A Collector Power Dissipation @ Ta=25℃ 3 PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5517

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 1.5 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 50 1.0 μA mA hFE DC Current Gain IC= 4.5A; VCE= 5V 5 9 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 4.5A 2.0 V Switching Times tstg Storage Time 5.0 μs tf Fall Time IC= 4.5A; IB1= 0.9A; IB2= -1.8A 0.5 μs isc Website：www.iscsemi.cn 2