2SC5516 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC5516

DESCRIPTION

  • High Breakdown Voltage
  • High Switching Speed
  • LowSaturation Voltage
  • 100% avalanche tested
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • Characterdisplay horizontaldeflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1500 V VCEO Collector-EmitterVoltage 600 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 20 A ICM CollectorCurrent-Continuous 30 A IB BaseCurrent-Continuous 8 A PC CollectorPowerDissipation @TC=25℃ 70 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

iscWebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC5516 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=10A;IB=2.5A 3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=10A;IB=2.5A 1.5 V ICBO CollectorCutoffCurrent VCB=1500V;IE=0 1.0 mA IEBO EmitterCutoffCurrent VEB=6V;IC=0 50 uA hFE DCCurrentGain IC=10A;VCE=5V 5 10 fT Current-Gain—BandwidthProduct IE=0.1A;VCE=10V 30 MHz Switchingtimes tstg StorageTime IC=10A,IB1=2.5A;IB2=-5.0A; 2.7 μs tf FallTime 0.2 μs