2SC5472 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation I Features

  • High transition frequency f T
  • High gain of 8.2 dB and low noise of 1.8 dB at 3 V
  • Optimum for RF amplification of a portable telephone and pager
  • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 9V Collector to emitter voltage V CEO 6V Emitter to base voltage V EBO 1V Collector current I C 30 mA Collector power dissipation P C 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Marking Symbol: 3A Unit: mm 2.1±0.1 1.3±0.1 0.3+0.1 –0.0 2.0±0.2 1.25±0.10 (0.425) (0.65) (0.65) 0.2±0.1 0.9±0.10 to 0.1 0.9+0.2 –0.1 0.15+0.10 –0.05 10° Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 9 V, IE = 01 µA Emitter cutoff current I EBO VEB = 1 V, IC = 01 µA Forward current transfer ratio h FE VCE = 3 V, IC = 10 mA 80 200 Transition frequency f T VCE = 3 V, IC = 10 mA, f = 2 GHz 12.0 GHz Collector output capacitance C ob VCB = 3 V, IE = 0, f = 1 MHz 0.6 0.9 pF Forward transfer gain | S21e | 2 VCE = 3 V, IC = 10 mA, f = 2 GHz 6.0 8.0 dB Noise figure NF V CE = 3 V, IC = 3 mA, f = 1.5 GHz 1.8 3.0 dB I Electrical Characteristics Ta = 25°C ± 3°C 1: Base 2: Emitter EIAJ: SC-70 3: Collector S-Mini Type Package

| S21e | 2  IC NF  IC hFE  IC Forward transfer gain | S21e | 2 (dB) 1 3 10 30 100 VCE = 3 V f = 2 GHz Collector current IC (mA) Noise figure NF (dB) 0.1 0.3 1 3 10 VCE = 3 V f = 1.5 GHz Collector current IC (mA) 0.1 0.3 240 200 160 120 1 3 10 30 100 Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (mA) 1 3 10 30 100 Transition frequency fT (GHz) VCE = 3 V Collector current IC (mA) fT  IC