2SC5457 PANASONIC

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Technical content

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l Satisfactory linearity of foward current transfer ratio hFE n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 500 500 400 1.2 1.0 150 –55 to +150 Unit V V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 500V, IE = 0 V EB = 5V , IC = 0 IC = 10mA, IB = 0 V CE = 5V , IC = 0.1A V CE = 2V , IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A V CE = 10V , IC = 0.2A, f = 1MHz V CC = 200V min 400 typ max 100 100 1.0 1.5 1.0 3.0 0.3 Unit mA mA V V V MHz ms ms ms TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter U Type Package 6.5–0.1 5.3–0.1 4.35–0.1 4.6–0.1 2.3–0.1 0.75–0.1 123 0.93–0.1 2.5–0.1 0.8max 1.0–0.2 7.3–0.1 1.8–0.1 2.3–0.1 0.5–0.1 0.5–0.1 0.1–0.05 1.0–0.1 6.5–0.2 2.3 5.35 4.35 13.3–0.3 2.3–0.1 5.5–0.26.0 1.8 0.75 0.6 2.3 0.5–0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) Unit: mm

PC — Ta Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink C =4.5W) (3) Without heat sink (PC =1.0W) (2) (3) (1) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C t=100µs DC 1ms 10ms ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)