2SC5414A SANYO

Document overview

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Technical content

Features

  • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz).
  • High cut-off frequency : fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 20 V Collector-to-Emitter Voltage V CEO 12 V Emitter-to-Base Voltage V EBO 2V Collector Current I C 100 mA Collector Dissipation P C 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 10 μA DC Current Gain hFE1V CE=5V, IC=30mA 90 * 270* hFE2V CE=5V, IC=70mA 70 Continued on next page. * : The 2SC5414A is classified by 30mA hFE as follows : Rank E F hFE 90 to 180 135 to 270 SANYO Semiconductors DATA SHEET www.semiconductor-sanyo.com/network 93009AB TK IM TC-00002103 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 2SC5414A NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

No. A1081-2/6 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE=5V, IC=30mA 5 6.7 GHz Output Capacitance Cob V CB=5V, f=1MHz 1.0 1.5 pF Reverse Transfer Capacitance Cre V CB=5V, f=1MHz 0.6 pF Forward Transfer Gain ⏐S21e⏐ 2 VCE=5V, IC=30mA, f=1GHz 8 9.5 dB Noise Figure NF V CE=5V, IC=7mA, f=1GHz 1.1 2.0 dB Package Dimensions unit : mm (typ) 7522-003 IC -- VCE 100 IC -- VBE 0.30mA 2VVCE =5V 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA IB=0mA IT13392 IT13393 0.35mA Collector-to-Emitter V oltage, VCE -- V Base-to-Emitter V oltage, V BE -- V Collector Current, IC -- mA Collector Current, IC -- mA 123 5.0 4.0 4.0 0.45 0.45 0.44 0.5 1.31.3 5.0 0.6 2.0 14.0 1 : Base 2 : Emitter 3 : Collector SANYO : NP

No. A1081-3/6 ⏐S21e⏐2 -- IC Collector Current, IC -- mA Forward Transfer Gain,⏐S21e⏐2 -- dB Collector Current, IC -- mA Collector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C Noise Figure, NF -- dB NF -- IC hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz fT -- IC Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF 100 1.0 335 7 2 23 2 3 557 7 10 100 23 5 71.0 210 35 7 100 1.0 VCE=5V VCE=5V IT13394 IT13401 500 400 300 200 100 20 40 60 80 100 120 140 160 IT13403 1.0 0.1 7 0.1 23 5 7 2 1.0 32 3 57 10 35 7227 10 35 7 1001.0 VCE=5V f=1GHz f=1MHz IT13396 IT13397 IT13402 1.0 0.1 7 0.1 23 5 7 2 1.0 32 3 57 10 f=1MHz IT13399 35 7227 10 35 7 1001.0 VCE=2V f=1GHz

No. A1081-4/6 S Parameters (Common emitter) VCE=2V , IC=5mA, ZO=50Ω VCE=2V , IC=10mA, ZO=50Ω VCE=2V , IC=20mA, ZO=50Ω VCE=2V , IC=30mA, ZO=50Ω

No. A1081-5/6 S Parameters (Common emitter) VCE=5V , IC=5mA, ZO=50Ω VCE=5V , IC=10mA, ZO=50Ω VCE=5V , IC=30mA, ZO=50Ω VCE=5V , IC=50mA, ZO=50Ω

No. A1081-6/6 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of September, 2009. Specifications and information herein are subject to change without notice. PS