2SC5407 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5407 isc Website：www.iscsemi.cn

DESCRIPTION

  • High Breakdown Voltage- : V CBO= 1700V (Min)
  • High Switching Speed
  • Wide Area of Safe Operation

APPLICATIONS

  • Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current- Peak 20 A IB B Base Current- Continuous 8 A Collector Power Dissipation @ TC=25℃ 100 PC Collector Power Dissipation @ T a=25℃ 3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5407

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 1.88A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 1.88A 1.5 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 50 1.0 μA mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA hFE DC Current Gain IC= 7.5A; VCE= 5V 6 14 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz Switching Times tstg Storage Time 4.0 μs tf Fall Time IC= 8A, IB1= 2A; IB2= -4A 0.3 μs isc Website：www.iscsemi.cn 2