2SC5393 PANASONIC

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Technical content

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l Satisfactory linearity of foward current transfer ratio hFE l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 600 600 400 150 –55 to +150 Unit V V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time Symbol I CBO IEBO hFE1 hFE2 V CE(sat) V BE(sat) fT tstg tf Conditions V CB = 600V, IE = 0 V EB = 5V , IC = 0 V CE = 5V , IC = 0.1A V CE = 5V , IC = 1.5A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A V CE = 10V , IC = 0.1A, f = 0.5MHz IC = 2A, IB1 = 0.4A, IB2 = – 0.8A, V CC = 150V min typ max 100 100 2.0 0.3 Unit mA mA V V MHz ms ms TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1

PC — Ta Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (2) (3) (4) (1) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 1 10 100 10003 30 300 0.001 0.01 0.1 100 10ms 1ms t=500µs ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)